DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.

S. Ichimura, M. Hirata, H. Tanino, N. Atoda, M. Ono, K. Hoh

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.

Original languageEnglish
Pages (from-to)1076-1079
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
Publication statusPublished - 1983 Jan 1
Externally publishedYes
EventProc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA
Duration: 1983 May 311983 Jun 3

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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