DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.

Shingo Ichimura, M. Hirata, H. Tanino, N. Atoda, M. Ono, K. Hoh

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.

Original languageEnglish
Pages (from-to)1076-1079
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
Publication statusPublished - 1983 Jan 1
Externally publishedYes
EventProc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA
Duration: 1983 May 311983 Jun 3

Fingerprint

engraving
Synchrotron radiation
Masks
synchrotron radiation
masks
Electron spectroscopy
electron spectroscopy
mass spectroscopy
Decomposition
decomposition
Substrates

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION. / Ichimura, Shingo; Hirata, M.; Tanino, H.; Atoda, N.; Ono, M.; Hoh, K.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 4, 01.01.1983, p. 1076-1079.

Research output: Contribution to journalConference article

@article{69a85b1bd4c14aac95069ce4d40c9a3c,
title = "DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.",
abstract = "Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.",
author = "Shingo Ichimura and M. Hirata and H. Tanino and N. Atoda and M. Ono and K. Hoh",
year = "1983",
month = "1",
day = "1",
doi = "10.1116/1.582636",
language = "English",
volume = "1",
pages = "1076--1079",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.

AU - Ichimura, Shingo

AU - Hirata, M.

AU - Tanino, H.

AU - Atoda, N.

AU - Ono, M.

AU - Hoh, K.

PY - 1983/1/1

Y1 - 1983/1/1

N2 - Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.

AB - Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=0020832282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020832282&partnerID=8YFLogxK

U2 - 10.1116/1.582636

DO - 10.1116/1.582636

M3 - Conference article

AN - SCOPUS:0020832282

VL - 1

SP - 1076

EP - 1079

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

ER -