Direct etching process using focused ion beam for microfabrication of crosslinked PTFE

Nozomi Miyoshi, Yoshinori Matsui, Akihiro Oshima, Shu Seki, Katsuyoshi Murata, Etsuko Kato, Seiichi Tagawa, Masakazu Washio

Research output: Contribution to conferencePaper

Abstract

Micro structures of polytetrafluoroethylene (PTFE) and crosslinked PTFE (RX-PTFE), which has remarkable thermal stability, chemical stability and electrical insulation, have been processed by focused ion beam (FIB). Fine structures of radiation crosslinked PTFE (RX-PTFE),with the size of several tens of μm, have been fabricated by FIB maskless direct etching. PTFE and RX-PTFE with various crosslinking densities, which were controlled from 0.23 % to 1.2 %, were irradiated by 30 keV/ 2.9-12 nA Ga+ ion beam with the fluence of 0.3 × 1016 - 4.5 × 1016 ions/cm 2. It was found that the etching rate of PTFE and RX-PTFE was approximately 10-15 μm/(ion/cm2).

Original languageEnglish
Pages3314-3315
Number of pages2
Publication statusPublished - 2006 Dec 1
Event55th Society of Polymer Science Japan Symposium on Macromolecules - Toyama, Japan
Duration: 2006 Sep 202006 Sep 22

Other

Other55th Society of Polymer Science Japan Symposium on Macromolecules
CountryJapan
CityToyama
Period06/9/2006/9/22

Keywords

  • Etching
  • Etching rate
  • Focused ion beam
  • PTFE

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Miyoshi, N., Matsui, Y., Oshima, A., Seki, S., Murata, K., Kato, E., Tagawa, S., & Washio, M. (2006). Direct etching process using focused ion beam for microfabrication of crosslinked PTFE. 3314-3315. Paper presented at 55th Society of Polymer Science Japan Symposium on Macromolecules, Toyama, Japan.