Direct formation of continuous multilayer graphene films with controllable thickness on dielectric substrates

Sachie Akiba, Masaki Kosaka, Kei Ohashi, Kei Hasegawa, Hisashi Sugime, Suguru Noda

Research output: Contribution to journalArticle

Abstract

Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl 2 at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C 2 H 4 /Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO 2 substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene.

Original languageEnglish
Pages (from-to)136-142
Number of pages7
JournalThin Solid Films
Volume675
DOIs
Publication statusPublished - 2019 Apr 1

Keywords

  • Continuous films
  • Direct formation on substrate
  • Layer number control
  • Multilayer graphene
  • Transfer-free deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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