Direct formation of graphene layers on diamond by higherature annealing with a Cu catalyst

K. Ueda*, S. Aichi, H. Asano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

The formation of high-quality graphene layers on diamond was achieved based on a higherature annealing method using a Cu catalyst. Typical features of monolayer graphene were observed in the Raman spectra of layers formed by annealing of Cu/diamond heterostructures at 950 °C for 90 min. The coverage ratio of these graphene layers on diamond was estimated to be on the order of 85% by Raman mapping of the 2D peak. The sheet hole concentration and mobility values of the layers were estimated to be ∼ 1013 cm- 2 and ∼ 670 cm2/Vs, respectively. These values are comparable to those previously observed for high-quality graphene layers on SiC.

Original languageEnglish
Pages (from-to)148-152
Number of pages5
JournalDiamond and Related Materials
Volume63
DOIs
Publication statusPublished - 2016 Mar 1
Externally publishedYes

Keywords

  • Diamond
  • Graphene
  • Higherature annealing
  • Mobility
  • Raman

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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