Direct observation of phonon relaxation bottleneck in InAs quantum dots of high-uniformity

T. Kitamura, R. Ohtsubo, M. Murayama, T. Kuroda, K. Yamaguchi, A. Tackeuchi

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)

Abstract

The intersubband carrier relaxation dynamics in InAs quantum dots of high-uniformity has been investigated using time-resolved photoluminescence measurement. The clearly separated photoluminescence spectra of the ground state and the second state were observed. The rate equation analysis gives the intersubband relaxation time from the second state to the ground state of 360 ps at 10 K. The slow intersubband relaxation can be attributed to the phonon relaxation bottleneck. The intersubband relaxation time at room temperature is evaluated to be 320 ps by extrapolation of 10-200 K data.

Original languageEnglish
Pages (from-to)1165-1168
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number4
DOIs
Publication statusPublished - 2003 Dec 1
Event2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
Duration: 2002 Sep 302002 Oct 3

ASJC Scopus subject areas

  • Condensed Matter Physics

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