Direct observation of phonon relaxation bottleneck in InAs quantum dots of high-uniformity

T. Kitamura, R. Ohtsubo, M. Murayama, T. Kuroda, K. Yamaguchi, Atsushi Tackeuchi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    12 Citations (Scopus)

    Abstract

    The intersubband carrier relaxation dynamics in InAs quantum dots of high-uniformity has been investigated using time-resolved photoluminescence measurement. The clearly separated photoluminescence spectra of the ground state and the second state were observed. The rate equation analysis gives the intersubband relaxation time from the second state to the ground state of 360 ps at 10 K. The slow intersubband relaxation can be attributed to the phonon relaxation bottleneck. The intersubband relaxation time at room temperature is evaluated to be 320 ps by extrapolation of 10-200 K data.

    Original languageEnglish
    Title of host publicationPhysica Status Solidi C: Conferences
    Pages1165-1168
    Number of pages4
    Edition4
    DOIs
    Publication statusPublished - 2003
    Event2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
    Duration: 2002 Sep 302002 Oct 3

    Other

    Other2nd International Conference on Semiconductor Quantum Dots, QD 2002
    CountryJapan
    CityTokyo
    Period02/9/3002/10/3

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    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry

    Cite this

    Kitamura, T., Ohtsubo, R., Murayama, M., Kuroda, T., Yamaguchi, K., & Tackeuchi, A. (2003). Direct observation of phonon relaxation bottleneck in InAs quantum dots of high-uniformity. In Physica Status Solidi C: Conferences (4 ed., pp. 1165-1168) https://doi.org/10.1002/pssc.200303028