TY - JOUR
T1 - Direct observation of phonon relaxation bottleneck in InAs quantum dots of high-uniformity
AU - Kitamura, T.
AU - Ohtsubo, R.
AU - Murayama, M.
AU - Kuroda, T.
AU - Yamaguchi, K.
AU - Tackeuchi, A.
PY - 2003
Y1 - 2003
N2 - The intersubband carrier relaxation dynamics in InAs quantum dots of high-uniformity has been investigated using time-resolved photoluminescence measurement. The clearly separated photoluminescence spectra of the ground state and the second state were observed. The rate equation analysis gives the intersubband relaxation time from the second state to the ground state of 360 ps at 10 K. The slow intersubband relaxation can be attributed to the phonon relaxation bottleneck. The intersubband relaxation time at room temperature is evaluated to be 320 ps by extrapolation of 10-200 K data.
AB - The intersubband carrier relaxation dynamics in InAs quantum dots of high-uniformity has been investigated using time-resolved photoluminescence measurement. The clearly separated photoluminescence spectra of the ground state and the second state were observed. The rate equation analysis gives the intersubband relaxation time from the second state to the ground state of 360 ps at 10 K. The slow intersubband relaxation can be attributed to the phonon relaxation bottleneck. The intersubband relaxation time at room temperature is evaluated to be 320 ps by extrapolation of 10-200 K data.
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U2 - 10.1002/pssc.200303028
DO - 10.1002/pssc.200303028
M3 - Conference article
AN - SCOPUS:33845747937
SP - 1165
EP - 1168
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1610-1634
IS - 4
T2 - 2nd International Conference on Semiconductor Quantum Dots, QD 2002
Y2 - 30 September 2002 through 3 October 2002
ER -