Abstract
The intersubband carrier relaxation dynamics in InAs quantum dots of high-uniformity has been investigated using time-resolved photoluminescence measurement. The clearly separated photoluminescence spectra of the ground state and the second state were observed. The rate equation analysis gives the intersubband relaxation time from the second state to the ground state of 360 ps at 10 K. The slow intersubband relaxation can be attributed to the phonon relaxation bottleneck. The intersubband relaxation time at room temperature is evaluated to be 320 ps by extrapolation of 10-200 K data.
| Original language | English |
|---|---|
| Title of host publication | Physica Status Solidi C: Conferences |
| Pages | 1165-1168 |
| Number of pages | 4 |
| Edition | 4 |
| DOIs | |
| Publication status | Published - 2003 |
| Event | 2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan Duration: 2002 Sep 30 → 2002 Oct 3 |
Other
| Other | 2nd International Conference on Semiconductor Quantum Dots, QD 2002 |
|---|---|
| Country | Japan |
| City | Tokyo |
| Period | 02/9/30 → 02/10/3 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
Cite this
Kitamura, T., Ohtsubo, R., Murayama, M., Kuroda, T., Yamaguchi, K., & Tackeuchi, A. (2003). Direct observation of phonon relaxation bottleneck in InAs quantum dots of high-uniformity. In Physica Status Solidi C: Conferences (4 ed., pp. 1165-1168) https://doi.org/10.1002/pssc.200303028