Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearity

Atsushi Tackeuchi, Shunichi Muto, Tsuguo Inata, Toshio Fujii

Research output: Contribution to journalArticle

109 Citations (Scopus)

Abstract

We have directly observed spin relaxation of excitons in the picosecond region using time-resolved polarization absorption measurements. With the help of spin-dependent optical nonlinearity of excitonic absorption, we obtained a fast decay of spin-up carriers and a fast accumulation of spin-down carriers with a spin relaxation time of 32 ps for a GaAs/Al0.51Ga 0.49As multiple quantum well at room temperature with a time resolution of 1 ps.

Original languageEnglish
Pages (from-to)2213-2215
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number22
DOIs
Publication statusPublished - 1990
Externally publishedYes

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aluminum gallium arsenides
nonlinearity
excitons
quantum wells
relaxation time
decay
room temperature
polarization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearity. / Tackeuchi, Atsushi; Muto, Shunichi; Inata, Tsuguo; Fujii, Toshio.

In: Applied Physics Letters, Vol. 56, No. 22, 1990, p. 2213-2215.

Research output: Contribution to journalArticle

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AU - Fujii, Toshio

PY - 1990

Y1 - 1990

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