Direct observation of the diffusion behavior of an electrodeposition additive in through-silicon via using in situ surface enhanced Raman spectroscopy

Takayuki Homma, Akira Kato, Masahiro Kunimoto, Masahiro Yanagisawa

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    In this work, the behavior of an additive designed to aid electrodeposition in through-silicon via (TSV) structures is monitored directly using surface enhanced Raman spectroscopy (SERS). A horizontal via structure with a transparent ceiling (corresponding to the side wall of the TSV) was prepared, which allowed the probe laser to reach the bottom of the structure (corresponding to the opposite side of the TSV wall). Au nanoparticles of size ~5 nm deposited on the bottom of the structure produced a SERS effect and enhanced the Raman signals of chemical species migrating nearby. The diffusion behavior of the additive inside the via structure could be monitored with high sensitivity by detecting these enhanced signals. As a case study, this direct measurement method was successfully used to follow the diffusion of a small amount of Janus Green B, a common additive for Cu electrodeposition. The diffusion coefficient of the additive determined by these measurements turned out to be different to that estimated electrochemically on flat electrodes. One of the advantages of our direct measurement setup is the ability to exclude the undesirable environmental changes that often occur in electrochemical measurements.

    Original languageEnglish
    Pages (from-to)34-38
    Number of pages5
    JournalElectrochemistry Communications
    Volume88
    DOIs
    Publication statusPublished - 2018 Mar 1

    Fingerprint

    Silicon
    Electrodeposition
    Raman spectroscopy
    Ceilings
    Nanoparticles
    Electrodes
    Lasers

    Keywords

    • additives
    • Cu electrodeposition
    • surface enhanced Raman spectroscopy
    • Through-silicon via

    ASJC Scopus subject areas

    • Electrochemistry

    Cite this

    @article{6542cc2ce9bd4313a06ba9dd0cc07773,
    title = "Direct observation of the diffusion behavior of an electrodeposition additive in through-silicon via using in situ surface enhanced Raman spectroscopy",
    abstract = "In this work, the behavior of an additive designed to aid electrodeposition in through-silicon via (TSV) structures is monitored directly using surface enhanced Raman spectroscopy (SERS). A horizontal via structure with a transparent ceiling (corresponding to the side wall of the TSV) was prepared, which allowed the probe laser to reach the bottom of the structure (corresponding to the opposite side of the TSV wall). Au nanoparticles of size ~5 nm deposited on the bottom of the structure produced a SERS effect and enhanced the Raman signals of chemical species migrating nearby. The diffusion behavior of the additive inside the via structure could be monitored with high sensitivity by detecting these enhanced signals. As a case study, this direct measurement method was successfully used to follow the diffusion of a small amount of Janus Green B, a common additive for Cu electrodeposition. The diffusion coefficient of the additive determined by these measurements turned out to be different to that estimated electrochemically on flat electrodes. One of the advantages of our direct measurement setup is the ability to exclude the undesirable environmental changes that often occur in electrochemical measurements.",
    keywords = "additives, Cu electrodeposition, surface enhanced Raman spectroscopy, Through-silicon via",
    author = "Takayuki Homma and Akira Kato and Masahiro Kunimoto and Masahiro Yanagisawa",
    year = "2018",
    month = "3",
    day = "1",
    doi = "10.1016/j.elecom.2018.01.008",
    language = "English",
    volume = "88",
    pages = "34--38",
    journal = "Electrochemistry Communications",
    issn = "1388-2481",
    publisher = "Elsevier Inc.",

    }

    TY - JOUR

    T1 - Direct observation of the diffusion behavior of an electrodeposition additive in through-silicon via using in situ surface enhanced Raman spectroscopy

    AU - Homma, Takayuki

    AU - Kato, Akira

    AU - Kunimoto, Masahiro

    AU - Yanagisawa, Masahiro

    PY - 2018/3/1

    Y1 - 2018/3/1

    N2 - In this work, the behavior of an additive designed to aid electrodeposition in through-silicon via (TSV) structures is monitored directly using surface enhanced Raman spectroscopy (SERS). A horizontal via structure with a transparent ceiling (corresponding to the side wall of the TSV) was prepared, which allowed the probe laser to reach the bottom of the structure (corresponding to the opposite side of the TSV wall). Au nanoparticles of size ~5 nm deposited on the bottom of the structure produced a SERS effect and enhanced the Raman signals of chemical species migrating nearby. The diffusion behavior of the additive inside the via structure could be monitored with high sensitivity by detecting these enhanced signals. As a case study, this direct measurement method was successfully used to follow the diffusion of a small amount of Janus Green B, a common additive for Cu electrodeposition. The diffusion coefficient of the additive determined by these measurements turned out to be different to that estimated electrochemically on flat electrodes. One of the advantages of our direct measurement setup is the ability to exclude the undesirable environmental changes that often occur in electrochemical measurements.

    AB - In this work, the behavior of an additive designed to aid electrodeposition in through-silicon via (TSV) structures is monitored directly using surface enhanced Raman spectroscopy (SERS). A horizontal via structure with a transparent ceiling (corresponding to the side wall of the TSV) was prepared, which allowed the probe laser to reach the bottom of the structure (corresponding to the opposite side of the TSV wall). Au nanoparticles of size ~5 nm deposited on the bottom of the structure produced a SERS effect and enhanced the Raman signals of chemical species migrating nearby. The diffusion behavior of the additive inside the via structure could be monitored with high sensitivity by detecting these enhanced signals. As a case study, this direct measurement method was successfully used to follow the diffusion of a small amount of Janus Green B, a common additive for Cu electrodeposition. The diffusion coefficient of the additive determined by these measurements turned out to be different to that estimated electrochemically on flat electrodes. One of the advantages of our direct measurement setup is the ability to exclude the undesirable environmental changes that often occur in electrochemical measurements.

    KW - additives

    KW - Cu electrodeposition

    KW - surface enhanced Raman spectroscopy

    KW - Through-silicon via

    UR - http://www.scopus.com/inward/record.url?scp=85041484253&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85041484253&partnerID=8YFLogxK

    U2 - 10.1016/j.elecom.2018.01.008

    DO - 10.1016/j.elecom.2018.01.008

    M3 - Article

    AN - SCOPUS:85041484253

    VL - 88

    SP - 34

    EP - 38

    JO - Electrochemistry Communications

    JF - Electrochemistry Communications

    SN - 1388-2481

    ER -