Direct observations of thermally induced structural changes in amorphous silicon carbide

Manabu Ishimaru, Akihiko Hirata, Muneyuki Naito, In Tae Bae, Yanwen Zhang, William J. Weber

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Abstract

Thermally induced structural relaxation in amorphous silicon carbide (SiC) has been examined by means of in situ transmission electron microscopy (TEM). The amorphous SiC was prepared by high-energy ion beam irradiation into a single crystalline 4H-SiC substrate. Cross-sectional TEM observations and electron energy-loss spectroscopy measurements revealed that thermal annealing induces a remarkable volume reduction, so-called densification, of amorphous SiC. From radial distribution function analyses using electron diffraction, notable changes associated with structural relaxation were observed in chemical short-range order. It was confirmed that the structural changes observed by the in situ TEM study agree qualitatively with those of the bulk material. On the basis of the alteration of chemical short-range order, we discuss the origin of thermally induced densification in amorphous SiC.

Original languageEnglish
Article number033503
JournalJournal of Applied Physics
Volume104
Issue number3
DOIs
Publication statusPublished - 2008 Aug 25
Externally publishedYes

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silicon carbides
amorphous silicon
densification
transmission electron microscopy
radial distribution
electron diffraction
energy dissipation
distribution functions
ion beams
electron energy
irradiation
annealing
energy
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Direct observations of thermally induced structural changes in amorphous silicon carbide. / Ishimaru, Manabu; Hirata, Akihiko; Naito, Muneyuki; Bae, In Tae; Zhang, Yanwen; Weber, William J.

In: Journal of Applied Physics, Vol. 104, No. 3, 033503, 25.08.2008.

Research output: Contribution to journalArticle

Ishimaru, Manabu ; Hirata, Akihiko ; Naito, Muneyuki ; Bae, In Tae ; Zhang, Yanwen ; Weber, William J. / Direct observations of thermally induced structural changes in amorphous silicon carbide. In: Journal of Applied Physics. 2008 ; Vol. 104, No. 3.
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