Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices

Fengwen Mu, Yinghui Wang, Ran He, Tadatomo Suga

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

GaN-on-SiC has been very attractive for high-power GaN device owing to the high thermal conductivity of SiC substrate. However, the transition layer with a low-thermal-conductivity for epitaxial growth of GaN layers cause a high thermal barrier resistance at the interface between GaN and SiC. This work employed surface activated bonding (SAB) method to fabricate GaN-on-SiC structure without a conventional transition layer via direct wafer bonding at room temperature. The interfaces bonded at room temperature was investigated to confirm the structure. Also, the interface annealed at 200 °C was inspected to confirm the possible changes at a working temperature.

Original languageEnglish
Pages (from-to)12-14
Number of pages3
JournalMaterialia
Volume3
DOIs
Publication statusPublished - 2018 Nov 1
Externally publishedYes

Fingerprint

Wafer bonding
Thermal conductivity
Epitaxial growth
Temperature
Substrates

Keywords

  • Bonding
  • GaN-on-SiC
  • High power devices
  • Interface
  • Room temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices. / Mu, Fengwen; Wang, Yinghui; He, Ran; Suga, Tadatomo.

In: Materialia, Vol. 3, 01.11.2018, p. 12-14.

Research output: Contribution to journalArticle

Mu, Fengwen ; Wang, Yinghui ; He, Ran ; Suga, Tadatomo. / Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices. In: Materialia. 2018 ; Vol. 3. pp. 12-14.
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