Abstract
In this work, direct wafer bonding of SiC-SiC was accomplished by surface activated bonding (SAB) method at room temperatrue. The bonding energy of ∼1.4 J/m2 was obtained without orientation dependence, which is much weaker than bulk SiC strength. Correspondingly, the tensile strength of bonding interface is ∼12.2 MPa. The bonding mechanisms were investigated through Monte Carlo simulation and interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The formation of amorphous SiC during surface activation may eliminate the affects of orientation, resulting in the disappearance of orientation dependence. In addition, the possible Si preferentially sputtering during surface activation is assumed to be the reason why direct wafer bonding of SiC-SiC cannot reach bulk SiC strength. After a rapid thermal annealing at 1273 K for 180 s in Ar, the tensile strength of bonding interface could be improved to the values higher than 21.6 MPa.
| Original language | English |
|---|---|
| Title of host publication | Semiconductor Wafer Bonding |
| Subtitle of host publication | Science, Technology and Applications 14 |
| Editors | R. Knechtel, F. Fournel, K. D. Hobart, T. Suga, H. Baumgart, C. S. Tan, M. S. Goorsky |
| Publisher | Electrochemical Society Inc. |
| Pages | 77-83 |
| Number of pages | 7 |
| Edition | 9 |
| ISBN (Electronic) | 9781607685395 |
| DOIs | |
| Publication status | Published - 2016 Jan 1 |
| Externally published | Yes |
| Event | Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2016 Oct 2 → 2016 Oct 7 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 9 |
| Volume | 75 |
| ISSN (Print) | 1938-5862 |
| ISSN (Electronic) | 1938-6737 |
Conference
| Conference | Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting |
|---|---|
| Country | United States |
| City | Honolulu |
| Period | 16/10/2 → 16/10/7 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Direct wafer bonding of SiC-SiC at room temperature by SAB method. / Mu, Fengwen; Iguchi, K.; Nakazawa, H.; Takahashi, Y.; Fujino, M.; Suga, T.
Semiconductor Wafer Bonding: Science, Technology and Applications 14. ed. / R. Knechtel; F. Fournel; K. D. Hobart; T. Suga; H. Baumgart; C. S. Tan; M. S. Goorsky. 9. ed. Electrochemical Society Inc., 2016. p. 77-83 (ECS Transactions; Vol. 75, No. 9).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Direct wafer bonding of SiC-SiC at room temperature by SAB method
AU - Mu, Fengwen
AU - Iguchi, K.
AU - Nakazawa, H.
AU - Takahashi, Y.
AU - Fujino, M.
AU - Suga, T.
PY - 2016/1/1
Y1 - 2016/1/1
N2 - In this work, direct wafer bonding of SiC-SiC was accomplished by surface activated bonding (SAB) method at room temperatrue. The bonding energy of ∼1.4 J/m2 was obtained without orientation dependence, which is much weaker than bulk SiC strength. Correspondingly, the tensile strength of bonding interface is ∼12.2 MPa. The bonding mechanisms were investigated through Monte Carlo simulation and interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The formation of amorphous SiC during surface activation may eliminate the affects of orientation, resulting in the disappearance of orientation dependence. In addition, the possible Si preferentially sputtering during surface activation is assumed to be the reason why direct wafer bonding of SiC-SiC cannot reach bulk SiC strength. After a rapid thermal annealing at 1273 K for 180 s in Ar, the tensile strength of bonding interface could be improved to the values higher than 21.6 MPa.
AB - In this work, direct wafer bonding of SiC-SiC was accomplished by surface activated bonding (SAB) method at room temperatrue. The bonding energy of ∼1.4 J/m2 was obtained without orientation dependence, which is much weaker than bulk SiC strength. Correspondingly, the tensile strength of bonding interface is ∼12.2 MPa. The bonding mechanisms were investigated through Monte Carlo simulation and interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The formation of amorphous SiC during surface activation may eliminate the affects of orientation, resulting in the disappearance of orientation dependence. In addition, the possible Si preferentially sputtering during surface activation is assumed to be the reason why direct wafer bonding of SiC-SiC cannot reach bulk SiC strength. After a rapid thermal annealing at 1273 K for 180 s in Ar, the tensile strength of bonding interface could be improved to the values higher than 21.6 MPa.
UR - http://www.scopus.com/inward/record.url?scp=84991494200&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84991494200&partnerID=8YFLogxK
U2 - 10.1149/07509.0077ecst
DO - 10.1149/07509.0077ecst
M3 - Conference contribution
AN - SCOPUS:84991494200
T3 - ECS Transactions
SP - 77
EP - 83
BT - Semiconductor Wafer Bonding
A2 - Knechtel, R.
A2 - Fournel, F.
A2 - Hobart, K. D.
A2 - Suga, T.
A2 - Baumgart, H.
A2 - Tan, C. S.
A2 - Goorsky, M. S.
PB - Electrochemical Society Inc.
ER -