Direct wafer bonding of SiC-SiC at room temperature by SAB method

Fengwen Mu, K. Iguchi, H. Nakazawa, Y. Takahashi, M. Fujino, T. Suga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this work, direct wafer bonding of SiC-SiC was accomplished by surface activated bonding (SAB) method at room temperatrue. The bonding energy of ∼1.4 J/m2 was obtained without orientation dependence, which is much weaker than bulk SiC strength. Correspondingly, the tensile strength of bonding interface is ∼12.2 MPa. The bonding mechanisms were investigated through Monte Carlo simulation and interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The formation of amorphous SiC during surface activation may eliminate the affects of orientation, resulting in the disappearance of orientation dependence. In addition, the possible Si preferentially sputtering during surface activation is assumed to be the reason why direct wafer bonding of SiC-SiC cannot reach bulk SiC strength. After a rapid thermal annealing at 1273 K for 180 s in Ar, the tensile strength of bonding interface could be improved to the values higher than 21.6 MPa.

Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding
Subtitle of host publicationScience, Technology and Applications 14
EditorsR. Knechtel, F. Fournel, K. D. Hobart, T. Suga, H. Baumgart, C. S. Tan, M. S. Goorsky
PublisherElectrochemical Society Inc.
Pages77-83
Number of pages7
Edition9
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes
EventSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number9
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mu, F., Iguchi, K., Nakazawa, H., Takahashi, Y., Fujino, M., & Suga, T. (2016). Direct wafer bonding of SiC-SiC at room temperature by SAB method. In R. Knechtel, F. Fournel, K. D. Hobart, T. Suga, H. Baumgart, C. S. Tan, & M. S. Goorsky (Eds.), Semiconductor Wafer Bonding: Science, Technology and Applications 14 (9 ed., pp. 77-83). (ECS Transactions; Vol. 75, No. 9). Electrochemical Society Inc.. https://doi.org/10.1149/07509.0077ecst