Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

Research output: Contribution to journalArticle

77 Citations (Scopus)


We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO2/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO 2/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate highefficiency lasers at a low cost.

Original languageEnglish
Pages (from-to)12139-12147
Number of pages9
JournalOptics Express
Issue number10
Publication statusPublished - 2014 Jan 1


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this