Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO2/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO 2/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate highefficiency lasers at a low cost.

Original languageEnglish
Pages (from-to)12139-12147
Number of pages9
JournalOptics Express
Volume22
Issue number10
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

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distributed feedback lasers
p-i-n junctions
lasers
injection
fabrication
thin films

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer. / Matsuo, Shinji; Fujii, Takuro; Hasebe, Koichi; Takeda, Koji; Sato, Tomonari; Kakitsuka, Takaaki.

In: Optics Express, Vol. 22, No. 10, 01.01.2014, p. 12139-12147.

Research output: Contribution to journalArticle

Matsuo, Shinji ; Fujii, Takuro ; Hasebe, Koichi ; Takeda, Koji ; Sato, Tomonari ; Kakitsuka, Takaaki. / Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer. In: Optics Express. 2014 ; Vol. 22, No. 10. pp. 12139-12147.
@article{a9b3c394474d4e1b81ce217d9a694163,
title = "Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer",
abstract = "We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO2/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO 2/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate highefficiency lasers at a low cost.",
author = "Shinji Matsuo and Takuro Fujii and Koichi Hasebe and Koji Takeda and Tomonari Sato and Takaaki Kakitsuka",
year = "2014",
month = "1",
day = "1",
doi = "10.1364/OE.22.012139",
language = "English",
volume = "22",
pages = "12139--12147",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "10",

}

TY - JOUR

T1 - Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer

AU - Matsuo, Shinji

AU - Fujii, Takuro

AU - Hasebe, Koichi

AU - Takeda, Koji

AU - Sato, Tomonari

AU - Kakitsuka, Takaaki

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO2/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO 2/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate highefficiency lasers at a low cost.

AB - We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO2/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO 2/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate highefficiency lasers at a low cost.

UR - http://www.scopus.com/inward/record.url?scp=84901264163&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84901264163&partnerID=8YFLogxK

U2 - 10.1364/OE.22.012139

DO - 10.1364/OE.22.012139

M3 - Article

VL - 22

SP - 12139

EP - 12147

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 10

ER -