Directly modulated DFB laser on SiO2/Si substrate for datacenter networks

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Reducing the operating energy of a distributed feedback (DFB) laser is a critical issue if we are to use the device as a directly modulated light source employing wavelength division multiplexing technologies in short-distance datacom networks. A membrane buried heterostructure (BH) DFB laser on a SiO2 layer is one candidate for reducing the operating energy because it provides a strong carrier and optical confinement in the active region. For low-cost fabrication, we have proposed and developed a fabrication procedure that employs the buried growth of an InP layer by using a directly bonded InP-based active layer on a SiO2/Si substrate, which enables us to use a large-scale Si wafer. To overcome the problem of the difference between the thermal expansion coefficients of Si, SiO 2, and InP, we have used a thin active layer (∼250 nm) on a SiO2/Si substrate as a template for the epitaxial growth of a III-V compound semiconductor. A lateral current injection structure is essential for fabricating a device with a 250-nm-thick template. Our fabricated DFB laser with a 73-μm cavity length exhibits a threshold current of 0.9 mA for continuous operation at room temperature and achieves lasing at up to 100 °C. We have also demonstrated 171-fJ/bit operation with a 25.8-Gb/s NRZ signal. These results indicate that the BH DFB laser on a SiO2/Si substrate is highly suitable for use as a transmitter for datacom applications.

Original languageEnglish
Article number7001558
Pages (from-to)1217-1222
Number of pages6
JournalJournal of Lightwave Technology
Volume33
Issue number6
DOIs
Publication statusPublished - 2015 Mar 15
Externally publishedYes

Fingerprint

distributed feedback lasers
templates
fabrication
wavelength division multiplexing
threshold currents
transmitters
lasing
thermal expansion
light sources
wafers
injection
membranes
cavities
energy
room temperature
coefficients

Keywords

  • DFB laser
  • lateral current injection
  • on-Si laser
  • optical interconnection

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Directly modulated DFB laser on SiO2/Si substrate for datacenter networks. / Matsuo, Shinji; Fujii, Takuro; Hasebe, Koichi; Takeda, Koji; Sato, Tomonari; Kakitsuka, Takaaki.

In: Journal of Lightwave Technology, Vol. 33, No. 6, 7001558, 15.03.2015, p. 1217-1222.

Research output: Contribution to journalArticle

Matsuo, Shinji ; Fujii, Takuro ; Hasebe, Koichi ; Takeda, Koji ; Sato, Tomonari ; Kakitsuka, Takaaki. / Directly modulated DFB laser on SiO2/Si substrate for datacenter networks. In: Journal of Lightwave Technology. 2015 ; Vol. 33, No. 6. pp. 1217-1222.
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