Discovery of the deep level related to hydrogen in anatase TiO2

Takahira Miyagi, Masayuki Kamei, Takefumi Mitsuhashi, Atsushi Yamazaki

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    Deep level transient spectroscopy was carried out to investigate the origin of the deep levels in the band gap of anatase Ti O2. The epitaxial anatase- Ti O2 film grown by metal-organic chemical vapor deposition possessed a deep level whose activation energy was 0.52 eV. In contrast, this deep level at 0.5 eV was not observed in the films grown by sputtering. However, by adding C H4 or H2 to the sputtering gas, the deep level at 0.5 eV was observed in the sputter-grown films. Furthermore, the density of this deep level increased with increasing hydrogen gas, suggesting that this deep level originated from hydrogen doping.

    Original languageEnglish
    Article number132101
    JournalApplied Physics Letters
    Volume88
    Issue number13
    DOIs
    Publication statusPublished - 2006

    Fingerprint

    anatase
    hydrogen
    sputtering
    gases
    metalorganic chemical vapor deposition
    activation energy
    spectroscopy

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Discovery of the deep level related to hydrogen in anatase TiO2 . / Miyagi, Takahira; Kamei, Masayuki; Mitsuhashi, Takefumi; Yamazaki, Atsushi.

    In: Applied Physics Letters, Vol. 88, No. 13, 132101, 2006.

    Research output: Contribution to journalArticle

    Miyagi, Takahira ; Kamei, Masayuki ; Mitsuhashi, Takefumi ; Yamazaki, Atsushi. / Discovery of the deep level related to hydrogen in anatase TiO2 In: Applied Physics Letters. 2006 ; Vol. 88, No. 13.
    @article{ebc015c7d4e541018a032b68347fd19b,
    title = "Discovery of the deep level related to hydrogen in anatase TiO2",
    abstract = "Deep level transient spectroscopy was carried out to investigate the origin of the deep levels in the band gap of anatase Ti O2. The epitaxial anatase- Ti O2 film grown by metal-organic chemical vapor deposition possessed a deep level whose activation energy was 0.52 eV. In contrast, this deep level at 0.5 eV was not observed in the films grown by sputtering. However, by adding C H4 or H2 to the sputtering gas, the deep level at 0.5 eV was observed in the sputter-grown films. Furthermore, the density of this deep level increased with increasing hydrogen gas, suggesting that this deep level originated from hydrogen doping.",
    author = "Takahira Miyagi and Masayuki Kamei and Takefumi Mitsuhashi and Atsushi Yamazaki",
    year = "2006",
    doi = "10.1063/1.2191090",
    language = "English",
    volume = "88",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "13",

    }

    TY - JOUR

    T1 - Discovery of the deep level related to hydrogen in anatase TiO2

    AU - Miyagi, Takahira

    AU - Kamei, Masayuki

    AU - Mitsuhashi, Takefumi

    AU - Yamazaki, Atsushi

    PY - 2006

    Y1 - 2006

    N2 - Deep level transient spectroscopy was carried out to investigate the origin of the deep levels in the band gap of anatase Ti O2. The epitaxial anatase- Ti O2 film grown by metal-organic chemical vapor deposition possessed a deep level whose activation energy was 0.52 eV. In contrast, this deep level at 0.5 eV was not observed in the films grown by sputtering. However, by adding C H4 or H2 to the sputtering gas, the deep level at 0.5 eV was observed in the sputter-grown films. Furthermore, the density of this deep level increased with increasing hydrogen gas, suggesting that this deep level originated from hydrogen doping.

    AB - Deep level transient spectroscopy was carried out to investigate the origin of the deep levels in the band gap of anatase Ti O2. The epitaxial anatase- Ti O2 film grown by metal-organic chemical vapor deposition possessed a deep level whose activation energy was 0.52 eV. In contrast, this deep level at 0.5 eV was not observed in the films grown by sputtering. However, by adding C H4 or H2 to the sputtering gas, the deep level at 0.5 eV was observed in the sputter-grown films. Furthermore, the density of this deep level increased with increasing hydrogen gas, suggesting that this deep level originated from hydrogen doping.

    UR - http://www.scopus.com/inward/record.url?scp=33645540058&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33645540058&partnerID=8YFLogxK

    U2 - 10.1063/1.2191090

    DO - 10.1063/1.2191090

    M3 - Article

    AN - SCOPUS:33645540058

    VL - 88

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 13

    M1 - 132101

    ER -