Abstract
We report on the crystalline improvement of InP layers grown on GaAs substrates by using sawtooth-patterned substrates. The period of sawtooth pattern was 1.2 μm and the layers were grown by low-pressure metalorganic chemical vapor deposition. Cross-sectional transmission electron microscope observation is applied to examine the effectiveness of the sawtooth-shaped hetero-interface for the reduction of threading dislocations in InP layers which accommodate lattice mismatch. A remarkable decrease in the full width at half-maximum values of the X-ray diffraction peaks was obtained, signifying a dramatic crystalline improvement due to the reduction of dislocations by the sawtooth-shaped interface. The unevenness of the layer surface which originates from the sawtooth shape of the substrate can be readily smoothed by thermal cycle annealing, which is accompanied by additional crystalline improvement. Moreover, an attempt to put a thin strained interlayer in the epitaxial layer as a defect filtering tool is also presented.
| Original language | English |
|---|---|
| Pages (from-to) | 313-318 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 137 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 1994 Apr 1 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Dislocation reduction in InP layers grown on sawtooth-patterned GaAs substrates. / Okuno, Yae; Kawano, Toshihiro; Koguchi, Masanari; Nakamura, Kuniyasu; Kakibayashi, Hiroshi.
In: Journal of Crystal Growth, Vol. 137, No. 3-4, 01.04.1994, p. 313-318.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dislocation reduction in InP layers grown on sawtooth-patterned GaAs substrates
AU - Okuno, Yae
AU - Kawano, Toshihiro
AU - Koguchi, Masanari
AU - Nakamura, Kuniyasu
AU - Kakibayashi, Hiroshi
PY - 1994/4/1
Y1 - 1994/4/1
N2 - We report on the crystalline improvement of InP layers grown on GaAs substrates by using sawtooth-patterned substrates. The period of sawtooth pattern was 1.2 μm and the layers were grown by low-pressure metalorganic chemical vapor deposition. Cross-sectional transmission electron microscope observation is applied to examine the effectiveness of the sawtooth-shaped hetero-interface for the reduction of threading dislocations in InP layers which accommodate lattice mismatch. A remarkable decrease in the full width at half-maximum values of the X-ray diffraction peaks was obtained, signifying a dramatic crystalline improvement due to the reduction of dislocations by the sawtooth-shaped interface. The unevenness of the layer surface which originates from the sawtooth shape of the substrate can be readily smoothed by thermal cycle annealing, which is accompanied by additional crystalline improvement. Moreover, an attempt to put a thin strained interlayer in the epitaxial layer as a defect filtering tool is also presented.
AB - We report on the crystalline improvement of InP layers grown on GaAs substrates by using sawtooth-patterned substrates. The period of sawtooth pattern was 1.2 μm and the layers were grown by low-pressure metalorganic chemical vapor deposition. Cross-sectional transmission electron microscope observation is applied to examine the effectiveness of the sawtooth-shaped hetero-interface for the reduction of threading dislocations in InP layers which accommodate lattice mismatch. A remarkable decrease in the full width at half-maximum values of the X-ray diffraction peaks was obtained, signifying a dramatic crystalline improvement due to the reduction of dislocations by the sawtooth-shaped interface. The unevenness of the layer surface which originates from the sawtooth shape of the substrate can be readily smoothed by thermal cycle annealing, which is accompanied by additional crystalline improvement. Moreover, an attempt to put a thin strained interlayer in the epitaxial layer as a defect filtering tool is also presented.
UR - http://www.scopus.com/inward/record.url?scp=0028413416&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028413416&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(94)90967-9
DO - 10.1016/0022-0248(94)90967-9
M3 - Article
AN - SCOPUS:0028413416
VL - 137
SP - 313
EP - 318
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3-4
ER -