Dislocation reduction in InP layers grown on sawtooth-patterned GaAs substrates

Engineering & Materials Science

• Crystalline materials 100%
• Substrates 67%
• Lattice mismatch 56%
• Low pressure chemical vapor deposition 51%
• Metallorganic chemical vapor deposition 50%
• Epitaxial films 48%
• Full width at half maximum 46%
• Annealing 31%
• X ray diffraction 31%
• Electron microscopes 30%
• Defects 21%
• Hot Temperature 15%

Chemical Compounds

• Threading Dislocation 89%
• Epitaxial Film 67%
• Reduction 43%
• Chemical Vapour Deposition 42%
• Filtration 41%
• Annealing 37%
• Shape 31%
• Electron Particle 25%
• X-Ray Diffraction 23%
• Surface 15%

Physics & Astronomy

• metalorganic chemical vapor deposition 22%
• interlayers 21%
• surface layers 20%
• low pressure 19%
• electron microscopes 18%
• cycles 15%
• annealing 14%
• defects 13%
• diffraction 12%
• x rays 10%