Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array

Nobuya Mori, Masanori Tomita, Hideki Minari, Takanobu Watanabe, Nobuyoshi Koshida

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    Impacts of atomic disorder on avalanche multiplication in a one-dimensional silicon nanodot (SiND) array have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.

    Original languageEnglish
    Article number04CJ04
    JournalJapanese Journal of Applied Physics
    Issue number4 PART 2
    Publication statusPublished - 2013 Apr


    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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