Domain growth of Si(111)-5 × 2 Au by high-temperature STM

Tsuyoshi Hasegawa*, Sumio Hosaka, Shigeyuki Hosoki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


Si(111)-5 × 2 Au reconstruction was studied dynamically at 500°C by high-temperature scanning tunneling microscopy (STM). Transitions of the 5 × 2 domains during growth were observed as invasive erosions of one domain by another. Whenever this occurred, the domain with its 2-fold direction crossing the domain boundary eroded away. This phenomenon suggests that growth in the 2-fold direction has a stronger driving force. Comparison with STM images taken at room temperature shows that the gold atoms seem to diffuse in the 2-fold direction at higher temperatures. The driving force is believed to derive from repulsion between the gold atoms.

Original languageEnglish
Pages (from-to)858-862
Number of pages5
JournalSurface Science
Publication statusPublished - 1996 Jun 20
Externally publishedYes


  • Gold
  • Growth
  • Scanning tunneling microscopy
  • Silicon
  • Surface structure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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