Domain growth of Si(111)-5 × 2 Au by high-temperature STM

Tsuyoshi Hasegawa; Sumio Hosaka; Shigeyuki Hosoki

doi:10.1016/0039-6028(96)00278-6

Domain growth of Si(111)-5 × 2 Au by high-temperature STM

Tsuyoshi Hasegawa, Sumio Hosaka, Shigeyuki Hosoki

Research output: Contribution to journal › Article

39 Citations (Scopus)

Abstract

Si(111)-5 × 2 Au reconstruction was studied dynamically at 500°C by high-temperature scanning tunneling microscopy (STM). Transitions of the 5 × 2 domains during growth were observed as invasive erosions of one domain by another. Whenever this occurred, the domain with its 2-fold direction crossing the domain boundary eroded away. This phenomenon suggests that growth in the 2-fold direction has a stronger driving force. Comparison with STM images taken at room temperature shows that the gold atoms seem to diffuse in the 2-fold direction at higher temperatures. The driving force is believed to derive from repulsion between the gold atoms.

Original language	English
Pages (from-to)	858-862
Number of pages	5
Journal	Surface Science
Volume	357-358
DOIs	https://doi.org/10.1016/0039-6028(96)00278-6
Publication status	Published - 1996 Jun 20
Externally published	Yes

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Keywords

Gold
Growth
Scanning tunneling microscopy
Silicon
Surface structure

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Condensed Matter Physics
Surfaces and Interfaces

Cite this

Hasegawa, T., Hosaka, S., & Hosoki, S. (1996). Domain growth of Si(111)-5 × 2 Au by high-temperature STM. Surface Science, 357-358, 858-862. https://doi.org/10.1016/0039-6028(96)00278-6

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Access to Document

10.1016/0039-6028(96)00278-6