Domain growth of Si(111)-5 × 2 Au by high-temperature STM

Tsuyoshi Hasegawa; Sumio Hosaka; Shigeyuki Hosoki

doi:10.1016/0039-6028(96)00278-6

Domain growth of Si(111)-5 × 2 Au by high-temperature STM

Tsuyoshi Hasegawa, Sumio Hosaka, Shigeyuki Hosoki

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Si(111)-5 × 2 Au reconstruction was studied dynamically at 500°C by high-temperature scanning tunneling microscopy (STM). Transitions of the 5 × 2 domains during growth were observed as invasive erosions of one domain by another. Whenever this occurred, the domain with its 2-fold direction crossing the domain boundary eroded away. This phenomenon suggests that growth in the 2-fold direction has a stronger driving force. Comparison with STM images taken at room temperature shows that the gold atoms seem to diffuse in the 2-fold direction at higher temperatures. The driving force is believed to derive from repulsion between the gold atoms.

Original language	English
Pages (from-to)	858-862
Number of pages	5
Journal	Surface Science
Volume	357-358
DOIs	https://doi.org/10.1016/0039-6028(96)00278-6
Publication status	Published - 1996 Jun 20
Externally published	Yes

Keywords

Gold
Growth
Scanning tunneling microscopy
Silicon
Surface structure

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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abstract = "Si(111)-5 × 2 Au reconstruction was studied dynamically at 500°C by high-temperature scanning tunneling microscopy (STM). Transitions of the 5 × 2 domains during growth were observed as invasive erosions of one domain by another. Whenever this occurred, the domain with its 2-fold direction crossing the domain boundary eroded away. This phenomenon suggests that growth in the 2-fold direction has a stronger driving force. Comparison with STM images taken at room temperature shows that the gold atoms seem to diffuse in the 2-fold direction at higher temperatures. The driving force is believed to derive from repulsion between the gold atoms.",

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author = "Tsuyoshi Hasegawa and Sumio Hosaka and Shigeyuki Hosoki",

year = "1996",

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doi = "10.1016/0039-6028(96)00278-6",

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T1 - Domain growth of Si(111)-5 × 2 Au by high-temperature STM

AU - Hasegawa, Tsuyoshi

AU - Hosaka, Sumio

AU - Hosoki, Shigeyuki

PY - 1996/6/20

Y1 - 1996/6/20

N2 - Si(111)-5 × 2 Au reconstruction was studied dynamically at 500°C by high-temperature scanning tunneling microscopy (STM). Transitions of the 5 × 2 domains during growth were observed as invasive erosions of one domain by another. Whenever this occurred, the domain with its 2-fold direction crossing the domain boundary eroded away. This phenomenon suggests that growth in the 2-fold direction has a stronger driving force. Comparison with STM images taken at room temperature shows that the gold atoms seem to diffuse in the 2-fold direction at higher temperatures. The driving force is believed to derive from repulsion between the gold atoms.

AB - Si(111)-5 × 2 Au reconstruction was studied dynamically at 500°C by high-temperature scanning tunneling microscopy (STM). Transitions of the 5 × 2 domains during growth were observed as invasive erosions of one domain by another. Whenever this occurred, the domain with its 2-fold direction crossing the domain boundary eroded away. This phenomenon suggests that growth in the 2-fold direction has a stronger driving force. Comparison with STM images taken at room temperature shows that the gold atoms seem to diffuse in the 2-fold direction at higher temperatures. The driving force is believed to derive from repulsion between the gold atoms.

KW - Gold

KW - Growth

KW - Scanning tunneling microscopy

KW - Silicon

KW - Surface structure

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JO - Surface Science

JF - Surface Science

SN - 0039-6028

ER -

Domain growth of Si(111)-5 × 2 Au by high-temperature STM

Abstract

Keywords

ASJC Scopus subject areas

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