Dominant free-exciton recombination radiation in chemical vapor deposited diamonds

Hiroshi Kawarada; Takahiro Tsutsumi; Hiroki Hirayama; Akira Yamaguchi

doi:10.1063/1.111126

Dominant free-exciton recombination radiation in chemical vapor deposited diamonds

Hiroshi Kawarada^*, Takahiro Tsutsumi, Hiroki Hirayama, Akira Yamaguchi

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Dominant free-exciton recombination radiation has been obtained from chemical vapor deposited diamonds. The crystals are formed in a microwave plasma using the mixtures CO and CO₂ diluted with hydrogen. The concentration of CO₂ and the position of the samples in the plasma affect the crystallinity of the samples. The peak emission intensity ratio between the free-exciton recombination radiation and the band A emission is more than 20 in the samples formed at the edge of discharging area and with the optimum concentration of CO₂. The value is the highest ever reported in diamond.

Original language	English
Pages (from-to)	451-453
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	4
DOIs	https://doi.org/10.1063/1.111126
Publication status	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Dominant free-exciton recombination radiation in chemical vapor deposited diamonds",

abstract = "Dominant free-exciton recombination radiation has been obtained from chemical vapor deposited diamonds. The crystals are formed in a microwave plasma using the mixtures CO and CO2 diluted with hydrogen. The concentration of CO2 and the position of the samples in the plasma affect the crystallinity of the samples. The peak emission intensity ratio between the free-exciton recombination radiation and the band A emission is more than 20 in the samples formed at the edge of discharging area and with the optimum concentration of CO2. The value is the highest ever reported in diamond.",

author = "Hiroshi Kawarada and Takahiro Tsutsumi and Hiroki Hirayama and Akira Yamaguchi",

year = "1994",

doi = "10.1063/1.111126",

language = "English",

volume = "64",

pages = "451--453",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Dominant free-exciton recombination radiation in chemical vapor deposited diamonds

AU - Kawarada, Hiroshi

AU - Tsutsumi, Takahiro

AU - Hirayama, Hiroki

AU - Yamaguchi, Akira

PY - 1994

Y1 - 1994

N2 - Dominant free-exciton recombination radiation has been obtained from chemical vapor deposited diamonds. The crystals are formed in a microwave plasma using the mixtures CO and CO2 diluted with hydrogen. The concentration of CO2 and the position of the samples in the plasma affect the crystallinity of the samples. The peak emission intensity ratio between the free-exciton recombination radiation and the band A emission is more than 20 in the samples formed at the edge of discharging area and with the optimum concentration of CO2. The value is the highest ever reported in diamond.

AB - Dominant free-exciton recombination radiation has been obtained from chemical vapor deposited diamonds. The crystals are formed in a microwave plasma using the mixtures CO and CO2 diluted with hydrogen. The concentration of CO2 and the position of the samples in the plasma affect the crystallinity of the samples. The peak emission intensity ratio between the free-exciton recombination radiation and the band A emission is more than 20 in the samples formed at the edge of discharging area and with the optimum concentration of CO2. The value is the highest ever reported in diamond.

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U2 - 10.1063/1.111126

DO - 10.1063/1.111126

M3 - Article

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EP - 453

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

ER -

Dominant free-exciton recombination radiation in chemical vapor deposited diamonds

Abstract

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