Doping characteristics of znse-znte strained layer superlattice grown by molecular beam epitaxy

R. Kimura, S. Dosho, A. Imai, Masakazu Kobayashi, M. Konagai, K. Takahashi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In order to obtain both p- and n-type conduction in a wide-bandgap II-VI compound semiconductor, we have prepared ZnSe-ZnTe strained-layer superlattices (SLS) by MBE with a modulation doping technique. Modulation-doped superlattices were analyzed by photoluminescence (PL) and the van der Pauw method. The effect of strain on the film quality induced in the SLS structure by lattice mismatch was investigated. Furthermore, the SLS structure has been directly observed by Transmission Electron Microscopy (TEM).

Original languageEnglish
Pages (from-to)112-116
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume792
DOIs
Publication statusPublished - 1987 Aug 11
Externally publishedYes

Fingerprint

Epitaxy
Superlattices
Molecular beam epitaxy
superlattices
molecular beam epitaxy
Doping (additives)
Modulation
modulation doping
Lattice mismatch
Photoluminescence
Transmission Electron Microscopy
Conduction
Semiconductors
Energy gap
Transmission electron microscopy
photoluminescence
modulation
conduction
transmission electron microscopy

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Doping characteristics of znse-znte strained layer superlattice grown by molecular beam epitaxy. / Kimura, R.; Dosho, S.; Imai, A.; Kobayashi, Masakazu; Konagai, M.; Takahashi, K.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 792, 11.08.1987, p. 112-116.

Research output: Contribution to journalArticle

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