The doping dependence of the thermopower, in-plane resistivity ρab(T), out-of-plane resistivity ρc(T), and susceptibility has been systematically measured for high-quality single crystal Bi2Sr2Ca2Cu3O10+ δ. We found that the transition temperature Tc and pseudogap formation temperature Tρc, below which ρc shows a typical upturn, do not change from their optimum values in the "overdoped" region, even though doping actually proceeds. This suggests that, in overdoped region, the bulk Tc is determined by the always underdoped inner planes, which have a large superconducting gap, while the carriers are mostly doped in the outer planes, which have a large phase stiffness.
|Number of pages||5|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2002 Jul 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics