Doping dependence of anisotropic resistivities in the trilayered superconductor (formula presented)

Takenori Fujii, Ichiro Terasaki, Takao Watanabe, Azusa Matsuda

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Abstract

The doping dependence of the thermopower, in-plane resistivity (formula presented) out-of-plane resistivity (formula presented) and susceptibility has been systematically measured for high-quality single crystal (formula presented) We found that the transition temperature (formula presented) and pseudogap formation temperature (formula presented) below which (formula presented) shows a typical upturn, do not change from their optimum values in the “overdoped” region, even though doping actually proceeds. This suggests that, in overdoped region, the bulk (formula presented) is determined by the always underdoped inner planes, which have a large superconducting gap, while the carriers are mostly doped in the outer planes, which have a large phase stiffness.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number2
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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