Doping dependence of anisotropic resistivities in the trilayered superconductor Bi2Sr2Ca2Cu3O10+ δ

Takenori Fujii*, Ichiro Terasaki, Takao Watanabe, Azusa Matsuda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


The doping dependence of the thermopower, in-plane resistivity ρab(T), out-of-plane resistivity ρc(T), and susceptibility has been systematically measured for high-quality single crystal Bi2Sr2Ca2Cu3O10+ δ. We found that the transition temperature Tc and pseudogap formation temperature Tρc, below which ρc shows a typical upturn, do not change from their optimum values in the "overdoped" region, even though doping actually proceeds. This suggests that, in overdoped region, the bulk Tc is determined by the always underdoped inner planes, which have a large superconducting gap, while the carriers are mostly doped in the outer planes, which have a large phase stiffness.

Original languageEnglish
Article number024507
Pages (from-to)245071-245075
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number2
Publication statusPublished - 2002 Jul 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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