The doping dependence of the thermopower, in-plane resistivity (formula presented) out-of-plane resistivity (formula presented) and susceptibility has been systematically measured for high-quality single crystal (formula presented) We found that the transition temperature (formula presented) and pseudogap formation temperature (formula presented) below which (formula presented) shows a typical upturn, do not change from their optimum values in the “overdoped” region, even though doping actually proceeds. This suggests that, in overdoped region, the bulk (formula presented) is determined by the always underdoped inner planes, which have a large superconducting gap, while the carriers are mostly doped in the outer planes, which have a large phase stiffness.
|Number of pages||5|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2002 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics