Doping dependence of anisotropic resistivities in the trilayered superconductor (formula presented)

Takenori Fujii, Ichiro Terasaki, Takao Watanabe, Azusa Matsuda

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The doping dependence of the thermopower, in-plane resistivity (formula presented) out-of-plane resistivity (formula presented) and susceptibility has been systematically measured for high-quality single crystal (formula presented) We found that the transition temperature (formula presented) and pseudogap formation temperature (formula presented) below which (formula presented) shows a typical upturn, do not change from their optimum values in the “overdoped” region, even though doping actually proceeds. This suggests that, in overdoped region, the bulk (formula presented) is determined by the always underdoped inner planes, which have a large superconducting gap, while the carriers are mostly doped in the outer planes, which have a large phase stiffness.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number2
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes

Fingerprint

Superconducting materials
Doping (additives)
electrical resistivity
Thermoelectric power
Superconducting transition temperature
Stiffness
Single crystals
Temperature
stiffness
transition temperature
magnetic permeability
single crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Doping dependence of anisotropic resistivities in the trilayered superconductor (formula presented). / Fujii, Takenori; Terasaki, Ichiro; Watanabe, Takao; Matsuda, Azusa.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 2, 01.01.2002, p. 1-5.

Research output: Contribution to journalArticle

@article{9e525295c8f2444787350cdf4bd4bb09,
title = "Doping dependence of anisotropic resistivities in the trilayered superconductor (formula presented)",
abstract = "The doping dependence of the thermopower, in-plane resistivity (formula presented) out-of-plane resistivity (formula presented) and susceptibility has been systematically measured for high-quality single crystal (formula presented) We found that the transition temperature (formula presented) and pseudogap formation temperature (formula presented) below which (formula presented) shows a typical upturn, do not change from their optimum values in the “overdoped” region, even though doping actually proceeds. This suggests that, in overdoped region, the bulk (formula presented) is determined by the always underdoped inner planes, which have a large superconducting gap, while the carriers are mostly doped in the outer planes, which have a large phase stiffness.",
author = "Takenori Fujii and Ichiro Terasaki and Takao Watanabe and Azusa Matsuda",
year = "2002",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.66.024507",
language = "English",
volume = "66",
pages = "1--5",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Doping dependence of anisotropic resistivities in the trilayered superconductor (formula presented)

AU - Fujii, Takenori

AU - Terasaki, Ichiro

AU - Watanabe, Takao

AU - Matsuda, Azusa

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The doping dependence of the thermopower, in-plane resistivity (formula presented) out-of-plane resistivity (formula presented) and susceptibility has been systematically measured for high-quality single crystal (formula presented) We found that the transition temperature (formula presented) and pseudogap formation temperature (formula presented) below which (formula presented) shows a typical upturn, do not change from their optimum values in the “overdoped” region, even though doping actually proceeds. This suggests that, in overdoped region, the bulk (formula presented) is determined by the always underdoped inner planes, which have a large superconducting gap, while the carriers are mostly doped in the outer planes, which have a large phase stiffness.

AB - The doping dependence of the thermopower, in-plane resistivity (formula presented) out-of-plane resistivity (formula presented) and susceptibility has been systematically measured for high-quality single crystal (formula presented) We found that the transition temperature (formula presented) and pseudogap formation temperature (formula presented) below which (formula presented) shows a typical upturn, do not change from their optimum values in the “overdoped” region, even though doping actually proceeds. This suggests that, in overdoped region, the bulk (formula presented) is determined by the always underdoped inner planes, which have a large superconducting gap, while the carriers are mostly doped in the outer planes, which have a large phase stiffness.

UR - http://www.scopus.com/inward/record.url?scp=84948407586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84948407586&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.66.024507

DO - 10.1103/PhysRevB.66.024507

M3 - Article

VL - 66

SP - 1

EP - 5

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 2

ER -