Doping dependent density of states and pseudogap behavior in La1−xSrxCuO4

A. Ino, T. Mizokawa, K. Kobayashi, A. Fujimori, T. Sasagawa, T. Kimura, K. Kishio, K. Tamasaku, H. Eisaki, S. Uchida

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Abstract

We have made a high-resolution photoemission study of La1−xSrxCuO4 in a wide hole concentration (x) range from a heavily overdoped metal to an undoped insulator. As x decreases, the spectral density of states at the chemical potential (μ) is suppressed with an x dependence similar to the suppression of the electronic specific heat coefficient. In the underdoped region, the spectra show a pseudogap structure on the energy scale of 0.1 eV. The width of the pseudogap increases with decreasing x following the x dependence of the characteristic temperatures of the magnetic susceptibility and the Hall coefficient.

Original languageEnglish
Pages (from-to)2124-2127
Number of pages4
JournalPhysical Review Letters
Volume81
Issue number10
DOIs
Publication statusPublished - 1998 Sep 7

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ino, A., Mizokawa, T., Kobayashi, K., Fujimori, A., Sasagawa, T., Kimura, T., Kishio, K., Tamasaku, K., Eisaki, H., & Uchida, S. (1998). Doping dependent density of states and pseudogap behavior in La1−xSrxCuO4. Physical Review Letters, 81(10), 2124-2127. https://doi.org/10.1103/PhysRevLett.81.2124