Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode

Satoshi Oikawa, Tetsuya Kawanishi, Kaoru Higuma, Yoshiro Matsuo, Masayuki Izutsu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We propose a resonant-type LiNbO3 optical modulator with low halfwave voltage. We optimize the phase constant of the electric wave with thick electrodes to reduce the halfwave voltage. The halfwave voltage of the fabricated modulator with 20-μm-thick electrodes is 5.8 V at 10.6 GHz.

Original languageEnglish
Pages (from-to)221-223
Number of pages3
JournalIEEE Photonics Technology Letters
Volume15
Issue number2
DOIs
Publication statusPublished - 2003 Feb 1
Externally publishedYes

Keywords

  • Electrode
  • Halfwave voltage
  • LiNbO
  • Optical modulator
  • Resonance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode'. Together they form a unique fingerprint.

  • Cite this