Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode

Satoshi Oikawa, Tetsuya Kawanishi, Kaoru Higuma, Yoshiro Matsuo, Masayuki Izutsu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We propose a resonant-type LiNbO3 optical modulator with low halfwave voltage. We optimize the phase constant of the electric wave with thick electrodes to reduce the halfwave voltage. The halfwave voltage of the fabricated modulator with 20-μm-thick electrodes is 5.8 V at 10.6 GHz.

Original languageEnglish
Pages (from-to)221-223
Number of pages3
JournalIEEE Photonics Technology Letters
Volume15
Issue number2
DOIs
Publication statusPublished - 2003 Feb
Externally publishedYes

Fingerprint

Light modulators
modulators
Electrodes
electrodes
Electric potential
electric potential
low voltage
Electromagnetic waves
Modulators

Keywords

  • Electrode
  • Halfwave voltage
  • LiNbO
  • Optical modulator
  • Resonance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode. / Oikawa, Satoshi; Kawanishi, Tetsuya; Higuma, Kaoru; Matsuo, Yoshiro; Izutsu, Masayuki.

In: IEEE Photonics Technology Letters, Vol. 15, No. 2, 02.2003, p. 221-223.

Research output: Contribution to journalArticle

Oikawa, Satoshi ; Kawanishi, Tetsuya ; Higuma, Kaoru ; Matsuo, Yoshiro ; Izutsu, Masayuki. / Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode. In: IEEE Photonics Technology Letters. 2003 ; Vol. 15, No. 2. pp. 221-223.
@article{0804ce38f2f14761a18f0169ba1f8294,
title = "Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode",
abstract = "We propose a resonant-type LiNbO3 optical modulator with low halfwave voltage. We optimize the phase constant of the electric wave with thick electrodes to reduce the halfwave voltage. The halfwave voltage of the fabricated modulator with 20-μm-thick electrodes is 5.8 V at 10.6 GHz.",
keywords = "Electrode, Halfwave voltage, LiNbO, Optical modulator, Resonance",
author = "Satoshi Oikawa and Tetsuya Kawanishi and Kaoru Higuma and Yoshiro Matsuo and Masayuki Izutsu",
year = "2003",
month = "2",
doi = "10.1109/LPT.2002.806102",
language = "English",
volume = "15",
pages = "221--223",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode

AU - Oikawa, Satoshi

AU - Kawanishi, Tetsuya

AU - Higuma, Kaoru

AU - Matsuo, Yoshiro

AU - Izutsu, Masayuki

PY - 2003/2

Y1 - 2003/2

N2 - We propose a resonant-type LiNbO3 optical modulator with low halfwave voltage. We optimize the phase constant of the electric wave with thick electrodes to reduce the halfwave voltage. The halfwave voltage of the fabricated modulator with 20-μm-thick electrodes is 5.8 V at 10.6 GHz.

AB - We propose a resonant-type LiNbO3 optical modulator with low halfwave voltage. We optimize the phase constant of the electric wave with thick electrodes to reduce the halfwave voltage. The halfwave voltage of the fabricated modulator with 20-μm-thick electrodes is 5.8 V at 10.6 GHz.

KW - Electrode

KW - Halfwave voltage

KW - LiNbO

KW - Optical modulator

KW - Resonance

UR - http://www.scopus.com/inward/record.url?scp=0037320539&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037320539&partnerID=8YFLogxK

U2 - 10.1109/LPT.2002.806102

DO - 10.1109/LPT.2002.806102

M3 - Article

AN - SCOPUS:0037320539

VL - 15

SP - 221

EP - 223

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 2

ER -