Drastic improvement in wettability of 6,13-bis(triisopropylsilylethynyl) pentacene by addition of silica nanoparticles for solution-processable organic field-effect transistors

Saori Yamazaki*, Takashi Hamada, Takashi Nagase, Sakae Tokai, Masashi Yoshikawa, Takashi Kobayashi, Yoshiki Michiwaki, Seiji Watase, Mitsuru Watanabe, Kimihiro Matsukawa, Hiroyoshi Naito

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

It is essential to control the wettability of soluble organic semiconductors on polymer gate dielectrics to realize low-cost, flexible, and large-area electronic circuits employing organic field-effect transistors using solution processes. We find that the addition of a small amount of silica nanoparticles (SNPs) drastically improves the wettability of the soluble organic semiconductor of 6,13-bis(triisopropylsilylethynyl)pentacene onto the hydrophobic polymer gate dielectric of poly(methylsilsesquioxane) in the spin-coating process. The improvement in wettability by the addition of SNPs is also demonstrated in the ink-jet printing process, which allows the direct patterning of soluble organic semiconductors on polymer gate dielectrics.

Original languageEnglish
Article number091602
JournalApplied Physics Express
Volume3
Issue number9
DOIs
Publication statusPublished - 2010 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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