Drastically improved performance in poly-Si TFTs with channel dimensions comparable to grain size

Noriyoshi Yamauchi, J. J J Hajjar, Rafael Reif

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Poly-Si thin-film transistors (TFTs) with channel dimensions (width, W, and length, L) comparable to the grain size of the film were fabricated and characterized. The grain size of the film was enhanced by Si ion implantation followed by a low-temperature anneal. A remarkable improvement was observed in the device performance as the channel dimensions decreased to W = L = 2 μm. The TFTs with submicron channel dimensions were characterized by an extremely abrupt switching in their transfer characteristic. The improvement was attributed to the floating-body effect as well as the minimization of the grain boundary effect. It is believed that the results obtained will have impact in the development of large-area devices such as active-matrix liquid-crystal displays and image sensors with on-glass circuits.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherPubl by IEEE
Pages353-356
Number of pages4
Publication statusPublished - 1989
Externally publishedYes
Event1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
Duration: 1989 Dec 31989 Dec 6

Other

Other1989 International Electron Devices Meeting - Technical Digest
CityWashington, DC, USA
Period89/12/389/12/6

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Yamauchi, N., Hajjar, J. J. J., & Reif, R. (1989). Drastically improved performance in poly-Si TFTs with channel dimensions comparable to grain size. In Technical Digest - International Electron Devices Meeting (pp. 353-356). Publ by IEEE.