Driving force of oxygen-ion migration across high-k/SiO2 interface

Ryota Kunugi, Nobuhiro Nakagawa, Takanobu Watanabe

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We clarified the mechanism of oxygen (O-)-ion migration at a high-k/SiO2 interface, which is a possible origin of the flat-band voltage shift in metal/high-k gate stacks. The oxygen density difference accommodation model was reproduced by a molecular dynamics simulation of an Al2O3/SiO2 structure, in which O- ions migrate from the higher oxygen density side to the lower one. We determined that the driving force of the O--ion migration is the short-range repulsion between ionic cores. The repulsive force is greater in materials with a higher oxygen density, pushing O- ions to the lower oxygen density side.

    Original languageEnglish
    Article number031501
    JournalApplied Physics Express
    Volume10
    Issue number3
    DOIs
    Publication statusPublished - 2017 Mar 1

    Fingerprint

    oxygen ions
    Oxygen
    Ions
    oxygen
    ions
    pushing
    accommodation
    Molecular dynamics
    molecular dynamics
    shift
    Computer simulation
    Electric potential
    electric potential
    Metals
    metals
    simulation

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Driving force of oxygen-ion migration across high-k/SiO2 interface. / Kunugi, Ryota; Nakagawa, Nobuhiro; Watanabe, Takanobu.

    In: Applied Physics Express, Vol. 10, No. 3, 031501, 01.03.2017.

    Research output: Contribution to journalArticle

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