DRY LIFTOFF METHOD BY SUBLIMATION OF MOLYBDENUM OXIDE.

Noriyoshi Yamauchi, Toshiaki Yachi, Tsutomu Wada

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

A new liftoff method is proposed in which the film to be lifted-off is deposited on a molybdenum pattern. After the deposition, liftoff is done by thermally oxidizing the molybdenum and sublimating the molybdenum oxide. One micro meter thick sputter-deposited silicon dioxide was successfully delineated by this dry liftoff method. Dry liftoff is possible in an oxygen ambient at a temperature of 700 degree C or higher. The rate at which the molybdenum underneath the silicon dioxide is removed increases with the oxidation temperature and is typically 30 mu m/min at 900 degree C.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages595-596
Number of pages2
Volume22
Edition9
Publication statusPublished - 1983 Sep
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamauchi, N., Yachi, T., & Wada, T. (1983). DRY LIFTOFF METHOD BY SUBLIMATION OF MOLYBDENUM OXIDE. In Japanese Journal of Applied Physics, Part 2: Letters (9 ed., Vol. 22, pp. 595-596)