Abstract
A new liftoff method is proposed in which the film to be lifted-off is deposited on a molybdenum pattern. After the deposition, liftoff is done by thermally oxidizing the molybdenum and sublimating the molybdenum oxide. One micro meter thick sputter-deposited silicon dioxide was successfully delineated by this dry liftoff method. Dry liftoff is possible in an oxygen ambient at a temperature of 700 degree C or higher. The rate at which the molybdenum underneath the silicon dioxide is removed increases with the oxidation temperature and is typically 30 mu m/min at 900 degree C.
| Original language | English |
|---|---|
| Pages (from-to) | 595-596 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 22 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1983 Jan 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)