Duplex Structure and Crystallization of Anodic Alumina Films

O. N O Sachiko, Tetsuya Osaka, Noboru Masuko

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The structure and the formation behavior of crystalline anodic films formed on aluminum in the mixture of boric acid / ammonium borate solution have been investigated. The film is composed of a boron-containing outer layer and a boron-free inner layer with lens-like crystals being present at the interface. The transport number of A13+ estimated from the thickness ratio of the outer to inner layers is 0.4 when the film is formed at the current density of 20 A-m'2 It increases to 0.45 when the current density is 200 A-m'2. The film thickness decreases with increasing current density. A porous cell structure is developed when the film is formed at a current density higher than 100 A-m"2. Voids in the lens-like crystals are localized in three different regions; i.e., the center top region, the upper interface region between amorphous and crystalline phases, and the lower half region of the crystals.

Original languageEnglish
Pages (from-to)819-824
Number of pages6
JournalDenki Kagaku
Volume64
Issue number7
Publication statusPublished - 1996

Fingerprint

Aluminum Oxide
Crystallization
Current density
Alumina
Boron
Crystals
Lenses
Crystalline materials
Boric acid
Aluminum
Film thickness

Keywords

  • Anodizing of aluminum
  • Crystal growth
  • Duplex structure
  • TEM

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Sachiko, O. N. O., Osaka, T., & Masuko, N. (1996). Duplex Structure and Crystallization of Anodic Alumina Films. Denki Kagaku, 64(7), 819-824.

Duplex Structure and Crystallization of Anodic Alumina Films. / Sachiko, O. N O; Osaka, Tetsuya; Masuko, Noboru.

In: Denki Kagaku, Vol. 64, No. 7, 1996, p. 819-824.

Research output: Contribution to journalArticle

Sachiko, ONO, Osaka, T & Masuko, N 1996, 'Duplex Structure and Crystallization of Anodic Alumina Films', Denki Kagaku, vol. 64, no. 7, pp. 819-824.
Sachiko, O. N O ; Osaka, Tetsuya ; Masuko, Noboru. / Duplex Structure and Crystallization of Anodic Alumina Films. In: Denki Kagaku. 1996 ; Vol. 64, No. 7. pp. 819-824.
@article{7418acd25a8848899d9e643acd9e446b,
title = "Duplex Structure and Crystallization of Anodic Alumina Films",
abstract = "The structure and the formation behavior of crystalline anodic films formed on aluminum in the mixture of boric acid / ammonium borate solution have been investigated. The film is composed of a boron-containing outer layer and a boron-free inner layer with lens-like crystals being present at the interface. The transport number of A13+ estimated from the thickness ratio of the outer to inner layers is 0.4 when the film is formed at the current density of 20 A-m'2 It increases to 0.45 when the current density is 200 A-m'2. The film thickness decreases with increasing current density. A porous cell structure is developed when the film is formed at a current density higher than 100 A-m{"}2. Voids in the lens-like crystals are localized in three different regions; i.e., the center top region, the upper interface region between amorphous and crystalline phases, and the lower half region of the crystals.",
keywords = "Anodizing of aluminum, Crystal growth, Duplex structure, TEM",
author = "Sachiko, {O. N O} and Tetsuya Osaka and Noboru Masuko",
year = "1996",
language = "English",
volume = "64",
pages = "819--824",
journal = "Electrochemistry",
issn = "1344-3542",
publisher = "Electrochemical Society of Japan",
number = "7",

}

TY - JOUR

T1 - Duplex Structure and Crystallization of Anodic Alumina Films

AU - Sachiko, O. N O

AU - Osaka, Tetsuya

AU - Masuko, Noboru

PY - 1996

Y1 - 1996

N2 - The structure and the formation behavior of crystalline anodic films formed on aluminum in the mixture of boric acid / ammonium borate solution have been investigated. The film is composed of a boron-containing outer layer and a boron-free inner layer with lens-like crystals being present at the interface. The transport number of A13+ estimated from the thickness ratio of the outer to inner layers is 0.4 when the film is formed at the current density of 20 A-m'2 It increases to 0.45 when the current density is 200 A-m'2. The film thickness decreases with increasing current density. A porous cell structure is developed when the film is formed at a current density higher than 100 A-m"2. Voids in the lens-like crystals are localized in three different regions; i.e., the center top region, the upper interface region between amorphous and crystalline phases, and the lower half region of the crystals.

AB - The structure and the formation behavior of crystalline anodic films formed on aluminum in the mixture of boric acid / ammonium borate solution have been investigated. The film is composed of a boron-containing outer layer and a boron-free inner layer with lens-like crystals being present at the interface. The transport number of A13+ estimated from the thickness ratio of the outer to inner layers is 0.4 when the film is formed at the current density of 20 A-m'2 It increases to 0.45 when the current density is 200 A-m'2. The film thickness decreases with increasing current density. A porous cell structure is developed when the film is formed at a current density higher than 100 A-m"2. Voids in the lens-like crystals are localized in three different regions; i.e., the center top region, the upper interface region between amorphous and crystalline phases, and the lower half region of the crystals.

KW - Anodizing of aluminum

KW - Crystal growth

KW - Duplex structure

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=33749600101&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749600101&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33749600101

VL - 64

SP - 819

EP - 824

JO - Electrochemistry

JF - Electrochemistry

SN - 1344-3542

IS - 7

ER -