Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

Hiroshi Kawarada, Tetsuya Yamada, Dechen Xu, Hidetoshi Tsuboi, Yuya Kitabayashi, Daisuke Matsumura, Masanobu Shibata, Takuya Kudo, Masafumi Inaba, Atsushi Hiraiwa

    Research output: Contribution to journalArticle

    17 Citations (Scopus)

    Abstract

    Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al 2 O 3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and V B.

    Original languageEnglish
    Article number42368
    JournalScientific Reports
    Volume7
    DOIs
    Publication statusPublished - 2017 Feb 20

    Fingerprint

    durability
    field effect transistors
    diamonds
    gases
    high voltages
    simplification
    electrical faults
    metal oxide semiconductors
    passivity
    insulators
    current density
    hydrogen

    ASJC Scopus subject areas

    • General

    Cite this

    Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications. / Kawarada, Hiroshi; Yamada, Tetsuya; Xu, Dechen; Tsuboi, Hidetoshi; Kitabayashi, Yuya; Matsumura, Daisuke; Shibata, Masanobu; Kudo, Takuya; Inaba, Masafumi; Hiraiwa, Atsushi.

    In: Scientific Reports, Vol. 7, 42368, 20.02.2017.

    Research output: Contribution to journalArticle

    Kawarada, H, Yamada, T, Xu, D, Tsuboi, H, Kitabayashi, Y, Matsumura, D, Shibata, M, Kudo, T, Inaba, M & Hiraiwa, A 2017, 'Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications', Scientific Reports, vol. 7, 42368. https://doi.org/10.1038/srep42368
    Kawarada, Hiroshi ; Yamada, Tetsuya ; Xu, Dechen ; Tsuboi, Hidetoshi ; Kitabayashi, Yuya ; Matsumura, Daisuke ; Shibata, Masanobu ; Kudo, Takuya ; Inaba, Masafumi ; Hiraiwa, Atsushi. / Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications. In: Scientific Reports. 2017 ; Vol. 7.
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