Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Shintaro Ohtsuka, Tomohiro Shimizu, Shoso Shingubara, Tsuyoshi Hasegawa, Masakazu Aono

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.

Original languageEnglish
Pages (from-to)166-170
Number of pages5
JournalPhysica Status Solidi - Rapid Research Letters
Volume9
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1
Externally publishedYes

Fingerprint

Electric fields
electric fields
breakdown
degradation
Degradation
Oxygen vacancies
retaining
filaments
Data storage equipment
cycles
oxygen
matrices
RRAM

Keywords

  • Atomic switches
  • On/off ratio
  • Oxygen vacancies
  • Resistive random-access memories
  • SiO
  • TaO
  • Tunneling

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Wang, Q., Itoh, Y., Tsuruoka, T., Ohtsuka, S., Shimizu, T., Shingubara, S., ... Aono, M. (2015). Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM. Physica Status Solidi - Rapid Research Letters, 9(3), 166-170. https://doi.org/10.1002/pssr.201409531

Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM. / Wang, Qi; Itoh, Yaomi; Tsuruoka, Tohru; Ohtsuka, Shintaro; Shimizu, Tomohiro; Shingubara, Shoso; Hasegawa, Tsuyoshi; Aono, Masakazu.

In: Physica Status Solidi - Rapid Research Letters, Vol. 9, No. 3, 01.03.2015, p. 166-170.

Research output: Contribution to journalArticle

Wang, Qi ; Itoh, Yaomi ; Tsuruoka, Tohru ; Ohtsuka, Shintaro ; Shimizu, Tomohiro ; Shingubara, Shoso ; Hasegawa, Tsuyoshi ; Aono, Masakazu. / Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM. In: Physica Status Solidi - Rapid Research Letters. 2015 ; Vol. 9, No. 3. pp. 166-170.
@article{ae0115c25b3848fdb8bdd9b8e105aa7e,
title = "Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM",
abstract = "ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.",
keywords = "Atomic switches, On/off ratio, Oxygen vacancies, Resistive random-access memories, SiO, TaO, Tunneling",
author = "Qi Wang and Yaomi Itoh and Tohru Tsuruoka and Shintaro Ohtsuka and Tomohiro Shimizu and Shoso Shingubara and Tsuyoshi Hasegawa and Masakazu Aono",
year = "2015",
month = "3",
day = "1",
doi = "10.1002/pssr.201409531",
language = "English",
volume = "9",
pages = "166--170",
journal = "Physica Status Solidi - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "3",

}

TY - JOUR

T1 - Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM

AU - Wang, Qi

AU - Itoh, Yaomi

AU - Tsuruoka, Tohru

AU - Ohtsuka, Shintaro

AU - Shimizu, Tomohiro

AU - Shingubara, Shoso

AU - Hasegawa, Tsuyoshi

AU - Aono, Masakazu

PY - 2015/3/1

Y1 - 2015/3/1

N2 - ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.

AB - ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.

KW - Atomic switches

KW - On/off ratio

KW - Oxygen vacancies

KW - Resistive random-access memories

KW - SiO

KW - TaO

KW - Tunneling

UR - http://www.scopus.com/inward/record.url?scp=84925396569&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925396569&partnerID=8YFLogxK

U2 - 10.1002/pssr.201409531

DO - 10.1002/pssr.201409531

M3 - Article

VL - 9

SP - 166

EP - 170

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 3

ER -