Abstract
ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.
Original language | English |
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Pages (from-to) | 166-170 |
Number of pages | 5 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 9 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2015 Mar 1 |
Externally published | Yes |
Keywords
- Atomic switches
- On/off ratio
- Oxygen vacancies
- Resistive random-access memories
- SiO
- TaO
- Tunneling
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics