Abstract
ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.
| Original language | English |
|---|---|
| Pages (from-to) | 166-170 |
| Number of pages | 5 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 9 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2015 Mar 1 |
| Externally published | Yes |
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Keywords
- Atomic switches
- On/off ratio
- Oxygen vacancies
- Resistive random-access memories
- SiO
- TaO
- Tunneling
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Science(all)
Cite this
Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM. / Wang, Qi; Itoh, Yaomi; Tsuruoka, Tohru; Ohtsuka, Shintaro; Shimizu, Tomohiro; Shingubara, Shoso; Hasegawa, Tsuyoshi; Aono, Masakazu.
In: Physica Status Solidi - Rapid Research Letters, Vol. 9, No. 3, 01.03.2015, p. 166-170.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM
AU - Wang, Qi
AU - Itoh, Yaomi
AU - Tsuruoka, Tohru
AU - Ohtsuka, Shintaro
AU - Shimizu, Tomohiro
AU - Shingubara, Shoso
AU - Hasegawa, Tsuyoshi
AU - Aono, Masakazu
PY - 2015/3/1
Y1 - 2015/3/1
N2 - ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.
AB - ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.
KW - Atomic switches
KW - On/off ratio
KW - Oxygen vacancies
KW - Resistive random-access memories
KW - SiO
KW - TaO
KW - Tunneling
UR - http://www.scopus.com/inward/record.url?scp=84925396569&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84925396569&partnerID=8YFLogxK
U2 - 10.1002/pssr.201409531
DO - 10.1002/pssr.201409531
M3 - Article
AN - SCOPUS:84925396569
VL - 9
SP - 166
EP - 170
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 3
ER -