Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Shintaro Ohtsuka, Tomohiro Shimizu, Shoso Shingubara, Tsuyoshi Hasegawa, Masakazu Aono

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.

Original languageEnglish
Pages (from-to)166-170
Number of pages5
JournalPhysica Status Solidi - Rapid Research Letters
Volume9
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1
Externally publishedYes

Keywords

  • Atomic switches
  • On/off ratio
  • Oxygen vacancies
  • Resistive random-access memories
  • SiO
  • TaO
  • Tunneling

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

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