Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM

Qi Wang*, Yaomi Itoh, Tohru Tsuruoka, Shintaro Ohtsuka, Tomohiro Shimizu, Shoso Shingubara, Tsuyoshi Hasegawa, Masakazu Aono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.

Original languageEnglish
Pages (from-to)166-170
Number of pages5
JournalPhysica Status Solidi - Rapid Research Letters
Issue number3
Publication statusPublished - 2015 Mar 1
Externally publishedYes


  • Atomic switches
  • On/off ratio
  • Oxygen vacancies
  • Resistive random-access memories
  • SiO
  • TaO
  • Tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


Dive into the research topics of 'Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM'. Together they form a unique fingerprint.

Cite this