Dynamic observation of Si crystal growth on a Si(111)7×7 surface by high-temperature scanning tunneling microscopy

Tsuyoshi Hasegawa, M. Kohno, S. Hosaka, S. Hosoki

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

The dynamic process of Si crystal growth on a Si(111)7×7 surface was studied in situ using high-temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7×7 surface, kept at 350°C, and the crystal growth was observed. The step-flow growth was observed as the appearance of new adatoms at the step edge. The [112] steps became jagged with [112] steps. At the [112] steps, new adatoms appeared in rows along the step edges.

Original languageEnglish
Pages (from-to)1943-1946
Number of pages4
JournalPhysical Review B
Volume48
Issue number3
DOIs
Publication statusPublished - 1993
Externally publishedYes

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Adatoms
Scanning tunneling microscopy
Crystallization
Crystal growth
scanning tunneling microscopy
crystal growth
Temperature
adatoms

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Dynamic observation of Si crystal growth on a Si(111)7×7 surface by high-temperature scanning tunneling microscopy. / Hasegawa, Tsuyoshi; Kohno, M.; Hosaka, S.; Hosoki, S.

In: Physical Review B, Vol. 48, No. 3, 1993, p. 1943-1946.

Research output: Contribution to journalArticle

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