Dynamic observation of Si crystal growth on a Si(111)7×7 surface by high-temperature scanning tunneling microscopy

Tsuyoshi Hasegawa, M. Kohno, S. Hosaka, S. Hosoki

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The dynamic process of Si crystal growth on a Si(111)7×7 surface was studied in situ using high-temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7×7 surface, kept at 350°C, and the crystal growth was observed. The step-flow growth was observed as the appearance of new adatoms at the step edge. The [112] steps became jagged with [112] steps. At the [112] steps, new adatoms appeared in rows along the step edges.

Original languageEnglish
Pages (from-to)1943-1946
Number of pages4
JournalPhysical Review B
Issue number3
Publication statusPublished - 1993
Externally publishedYes


ASJC Scopus subject areas

  • Condensed Matter Physics

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