Dynamic observation of Si-island growth on a Si(111)-7 X 7 surface by high-temperature scanning tunneling microscopy

Tsuyoshi Hasegawa, Wataru Shimada, Hiroshi Tochihara, Shigeyuki Hosoki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Si-island growth on a Si(111)-7 X 7 surface was studied at 350°C in situ using high-temperature scanning tunneling microscopy. At the beginning of growth, deposited Si atoms formed small amorphous clusters within each triangular subunit of the 7 X 7 structure. The amorphous clusters grew, and crystallized islands also appeared as the quantity of deposited Si atoms increased. At the domain boundaries of the 7 X 7 structure, islands tended to begin forming on the unfaulted half of the 7 X 7 structure. These phenomena indicate that cancellation of the stacking fault on the substrate surface dominates island growth.

Original languageEnglish
Pages (from-to)314-318
Number of pages5
JournalJournal of Crystal Growth
Volume166
Issue number1-4
Publication statusPublished - 1996 Sep
Externally publishedYes

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Scanning tunneling microscopy
scanning tunneling microscopy
Atoms
Stacking faults
Temperature
crystal defects
cancellation
atoms
Substrates

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Dynamic observation of Si-island growth on a Si(111)-7 X 7 surface by high-temperature scanning tunneling microscopy. / Hasegawa, Tsuyoshi; Shimada, Wataru; Tochihara, Hiroshi; Hosoki, Shigeyuki.

In: Journal of Crystal Growth, Vol. 166, No. 1-4, 09.1996, p. 314-318.

Research output: Contribution to journalArticle

Hasegawa, Tsuyoshi ; Shimada, Wataru ; Tochihara, Hiroshi ; Hosoki, Shigeyuki. / Dynamic observation of Si-island growth on a Si(111)-7 X 7 surface by high-temperature scanning tunneling microscopy. In: Journal of Crystal Growth. 1996 ; Vol. 166, No. 1-4. pp. 314-318.
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