Abstract
We have directly measured carrier tunneling times between vertically aligned double quantum dots (QD's) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of In0.9Al0.1As QD's, a GaAs barrier layer, and InAs QD's. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QD's is found to be suppressed to one-tenth of the tunneling rate between quantum wells.
| Original language | English |
|---|---|
| Pages (from-to) | 1568-1571 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 62 |
| Issue number | 3 |
| Publication status | Published - 2000 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Dynamics of carrier tunneling between vertically aligned double quantum dots. / Tackeuchi, Atsushi; Kuroda, Takamasa; Mase, Kazuo; Nakata, Yoshiaki; Yokoyama, Naoki.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 3, 2000, p. 1568-1571.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dynamics of carrier tunneling between vertically aligned double quantum dots
AU - Tackeuchi, Atsushi
AU - Kuroda, Takamasa
AU - Mase, Kazuo
AU - Nakata, Yoshiaki
AU - Yokoyama, Naoki
PY - 2000
Y1 - 2000
N2 - We have directly measured carrier tunneling times between vertically aligned double quantum dots (QD's) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of In0.9Al0.1As QD's, a GaAs barrier layer, and InAs QD's. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QD's is found to be suppressed to one-tenth of the tunneling rate between quantum wells.
AB - We have directly measured carrier tunneling times between vertically aligned double quantum dots (QD's) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of In0.9Al0.1As QD's, a GaAs barrier layer, and InAs QD's. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QD's is found to be suppressed to one-tenth of the tunneling rate between quantum wells.
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UR - http://www.scopus.com/inward/citedby.url?scp=0001077707&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0001077707
VL - 62
SP - 1568
EP - 1571
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 3
ER -