Dynamics of carrier tunneling between vertically aligned double quantum dots

Atsushi Tackeuchi, Takamasa Kuroda, Kazuo Mase, Yoshiaki Nakata, Naoki Yokoyama

Research output: Contribution to journalArticle

83 Citations (Scopus)

Abstract

We have directly measured carrier tunneling times between vertically aligned double quantum dots (QD’s) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of (Formula presented) QD’s, a GaAs barrier layer, and InAs QD’s. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QD’s is found to be suppressed to one-tenth of the tunneling rate between quantum wells.

Original languageEnglish
Pages (from-to)1568-1571
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number3
DOIs
Publication statusPublished - 2000 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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