Abstract
We have directly measured carrier tunneling times between vertically aligned double quantum dots (QD’s) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of (Formula presented) QD’s, a GaAs barrier layer, and InAs QD’s. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QD’s is found to be suppressed to one-tenth of the tunneling rate between quantum wells.
| Original language | English |
|---|---|
| Pages (from-to) | 1568-1571 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 62 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Tackeuchi, A., Kuroda, T., Mase, K., Nakata, Y., & Yokoyama, N. (2000). Dynamics of carrier tunneling between vertically aligned double quantum dots. Physical Review B - Condensed Matter and Materials Physics, 62(3), 1568-1571. https://doi.org/10.1103/PhysRevB.62.1568