TY - JOUR
T1 - Dynamics of carrier tunneling between vertically aligned double quantum dots
AU - Tackeuchi, Atsushi
AU - Kuroda, Takamasa
AU - Mase, Kazuo
AU - Nakata, Yoshiaki
AU - Yokoyama, Naoki
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2000
Y1 - 2000
N2 - We have directly measured carrier tunneling times between vertically aligned double quantum dots (QD’s) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of (Formula presented) QD’s, a GaAs barrier layer, and InAs QD’s. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QD’s is found to be suppressed to one-tenth of the tunneling rate between quantum wells.
AB - We have directly measured carrier tunneling times between vertically aligned double quantum dots (QD’s) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of (Formula presented) QD’s, a GaAs barrier layer, and InAs QD’s. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QD’s is found to be suppressed to one-tenth of the tunneling rate between quantum wells.
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U2 - 10.1103/PhysRevB.62.1568
DO - 10.1103/PhysRevB.62.1568
M3 - Article
AN - SCOPUS:0001077707
VL - 62
SP - 1568
EP - 1571
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 3
ER -