Dynamics of carrier tunneling between vertically aligned double quantum dots

Atsushi Tackeuchi, Takamasa Kuroda, Kazuo Mase, Yoshiaki Nakata, Naoki Yokoyama

    Research output: Contribution to journalArticle

    78 Citations (Scopus)

    Abstract

    We have directly measured carrier tunneling times between vertically aligned double quantum dots (QD's) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of In0.9Al0.1As QD's, a GaAs barrier layer, and InAs QD's. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QD's is found to be suppressed to one-tenth of the tunneling rate between quantum wells.

    Original languageEnglish
    Pages (from-to)1568-1571
    Number of pages4
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume62
    Issue number3
    Publication statusPublished - 2000

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    Semiconductor quantum dots
    quantum dots
    barrier layers
    Semiconductor quantum wells
    Photoluminescence
    quantum wells
    photoluminescence
    approximation

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Dynamics of carrier tunneling between vertically aligned double quantum dots. / Tackeuchi, Atsushi; Kuroda, Takamasa; Mase, Kazuo; Nakata, Yoshiaki; Yokoyama, Naoki.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 3, 2000, p. 1568-1571.

    Research output: Contribution to journalArticle

    Tackeuchi, Atsushi ; Kuroda, Takamasa ; Mase, Kazuo ; Nakata, Yoshiaki ; Yokoyama, Naoki. / Dynamics of carrier tunneling between vertically aligned double quantum dots. In: Physical Review B - Condensed Matter and Materials Physics. 2000 ; Vol. 62, No. 3. pp. 1568-1571.
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