E-band 65nm CMOS low-noise amplifier design using gain-boost technique

Kosuke Katayama, Mizuki Motoyoshi, Kyoya Takano, Chen Yang Li, Shuhei Amakawa, Minoru Fujishima

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

E-band communication is allocated to the frequency bands of 71-76 and 81-86 GHz. Radio-frequency (RF) front-end components for E-band communication have been realized using compound semiconductor technology. To realize a CMOS LNA for E-band communication, we propose a gain-boosted cascode amplifier (GBCA) stage that simultaneously provides high gain and stability. Designing an LNA from scratch requires considerable time because the tuning of matching networks with consideration of the parasitic elements is complicated. In this paper, we model the characteristics of devices including the effects of their parasitic elements. Using these models, an optimizer can estimate the characteristic of a designed LNA precisely without electromagnetic simulations and gives us the design values of an LNA when the layout constraint is ignored. Starting from the values, a four-stage LNA with a GBCA stage is designed very easily even though the layout constraint is considered and fabricated by a 65 nm LP CMOS process. The fabricated LNA is measured, and it is confirmed that it achieves 18.5 GHz bandwidth and over 24.3 dB gain with 50.6mW power consumption. This is the first LNA to achieve a gain bandwidth of over 300 GHz in the E-band among the LNAs utilizing any kind of semiconductor technologies. In this paper, we have proved that CMOS technology, which is suitable for baseband and digital circuitry, is applicable to a communication system covering the entire E-band.

Original languageEnglish
Pages (from-to)476-485
Number of pages10
JournalIEICE Transactions on Electronics
VolumeE97-C
Issue number6
DOIs
Publication statusPublished - 2014
Externally publishedYes

Fingerprint

Low noise amplifiers
Communication
Semiconductor materials
Bandwidth
Frequency bands
Communication systems
Electric power utilization
Tuning
Cascode amplifiers

Keywords

  • Body bias
  • Coupled resonator
  • Device modeling
  • E-band communication
  • Millimeter wave
  • Optimizer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

E-band 65nm CMOS low-noise amplifier design using gain-boost technique. / Katayama, Kosuke; Motoyoshi, Mizuki; Takano, Kyoya; Li, Chen Yang; Amakawa, Shuhei; Fujishima, Minoru.

In: IEICE Transactions on Electronics, Vol. E97-C, No. 6, 2014, p. 476-485.

Research output: Contribution to journalArticle

Katayama, K, Motoyoshi, M, Takano, K, Li, CY, Amakawa, S & Fujishima, M 2014, 'E-band 65nm CMOS low-noise amplifier design using gain-boost technique', IEICE Transactions on Electronics, vol. E97-C, no. 6, pp. 476-485. https://doi.org/10.1587/transele.E97.C.476
Katayama, Kosuke ; Motoyoshi, Mizuki ; Takano, Kyoya ; Li, Chen Yang ; Amakawa, Shuhei ; Fujishima, Minoru. / E-band 65nm CMOS low-noise amplifier design using gain-boost technique. In: IEICE Transactions on Electronics. 2014 ; Vol. E97-C, No. 6. pp. 476-485.
@article{c3bdf1390a0f4606a50e46aad3b81871,
title = "E-band 65nm CMOS low-noise amplifier design using gain-boost technique",
abstract = "E-band communication is allocated to the frequency bands of 71-76 and 81-86 GHz. Radio-frequency (RF) front-end components for E-band communication have been realized using compound semiconductor technology. To realize a CMOS LNA for E-band communication, we propose a gain-boosted cascode amplifier (GBCA) stage that simultaneously provides high gain and stability. Designing an LNA from scratch requires considerable time because the tuning of matching networks with consideration of the parasitic elements is complicated. In this paper, we model the characteristics of devices including the effects of their parasitic elements. Using these models, an optimizer can estimate the characteristic of a designed LNA precisely without electromagnetic simulations and gives us the design values of an LNA when the layout constraint is ignored. Starting from the values, a four-stage LNA with a GBCA stage is designed very easily even though the layout constraint is considered and fabricated by a 65 nm LP CMOS process. The fabricated LNA is measured, and it is confirmed that it achieves 18.5 GHz bandwidth and over 24.3 dB gain with 50.6mW power consumption. This is the first LNA to achieve a gain bandwidth of over 300 GHz in the E-band among the LNAs utilizing any kind of semiconductor technologies. In this paper, we have proved that CMOS technology, which is suitable for baseband and digital circuitry, is applicable to a communication system covering the entire E-band.",
keywords = "Body bias, Coupled resonator, Device modeling, E-band communication, Millimeter wave, Optimizer",
author = "Kosuke Katayama and Mizuki Motoyoshi and Kyoya Takano and Li, {Chen Yang} and Shuhei Amakawa and Minoru Fujishima",
year = "2014",
doi = "10.1587/transele.E97.C.476",
language = "English",
volume = "E97-C",
pages = "476--485",
journal = "IEICE Transactions on Electronics",
issn = "0916-8524",
publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",
number = "6",

}

TY - JOUR

T1 - E-band 65nm CMOS low-noise amplifier design using gain-boost technique

AU - Katayama, Kosuke

AU - Motoyoshi, Mizuki

AU - Takano, Kyoya

AU - Li, Chen Yang

AU - Amakawa, Shuhei

AU - Fujishima, Minoru

PY - 2014

Y1 - 2014

N2 - E-band communication is allocated to the frequency bands of 71-76 and 81-86 GHz. Radio-frequency (RF) front-end components for E-band communication have been realized using compound semiconductor technology. To realize a CMOS LNA for E-band communication, we propose a gain-boosted cascode amplifier (GBCA) stage that simultaneously provides high gain and stability. Designing an LNA from scratch requires considerable time because the tuning of matching networks with consideration of the parasitic elements is complicated. In this paper, we model the characteristics of devices including the effects of their parasitic elements. Using these models, an optimizer can estimate the characteristic of a designed LNA precisely without electromagnetic simulations and gives us the design values of an LNA when the layout constraint is ignored. Starting from the values, a four-stage LNA with a GBCA stage is designed very easily even though the layout constraint is considered and fabricated by a 65 nm LP CMOS process. The fabricated LNA is measured, and it is confirmed that it achieves 18.5 GHz bandwidth and over 24.3 dB gain with 50.6mW power consumption. This is the first LNA to achieve a gain bandwidth of over 300 GHz in the E-band among the LNAs utilizing any kind of semiconductor technologies. In this paper, we have proved that CMOS technology, which is suitable for baseband and digital circuitry, is applicable to a communication system covering the entire E-band.

AB - E-band communication is allocated to the frequency bands of 71-76 and 81-86 GHz. Radio-frequency (RF) front-end components for E-band communication have been realized using compound semiconductor technology. To realize a CMOS LNA for E-band communication, we propose a gain-boosted cascode amplifier (GBCA) stage that simultaneously provides high gain and stability. Designing an LNA from scratch requires considerable time because the tuning of matching networks with consideration of the parasitic elements is complicated. In this paper, we model the characteristics of devices including the effects of their parasitic elements. Using these models, an optimizer can estimate the characteristic of a designed LNA precisely without electromagnetic simulations and gives us the design values of an LNA when the layout constraint is ignored. Starting from the values, a four-stage LNA with a GBCA stage is designed very easily even though the layout constraint is considered and fabricated by a 65 nm LP CMOS process. The fabricated LNA is measured, and it is confirmed that it achieves 18.5 GHz bandwidth and over 24.3 dB gain with 50.6mW power consumption. This is the first LNA to achieve a gain bandwidth of over 300 GHz in the E-band among the LNAs utilizing any kind of semiconductor technologies. In this paper, we have proved that CMOS technology, which is suitable for baseband and digital circuitry, is applicable to a communication system covering the entire E-band.

KW - Body bias

KW - Coupled resonator

KW - Device modeling

KW - E-band communication

KW - Millimeter wave

KW - Optimizer

UR - http://www.scopus.com/inward/record.url?scp=84902800905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84902800905&partnerID=8YFLogxK

U2 - 10.1587/transele.E97.C.476

DO - 10.1587/transele.E97.C.476

M3 - Article

VL - E97-C

SP - 476

EP - 485

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 6

ER -