Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length

H. Sayama*, Y. Nishida, H. Oda, T. Oishi, S. Shimizu, T. Kunikiyo, K. Sonoda, Y. Inoue, M. Inuishi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

36 Citations (Scopus)

Abstract

A high performance CMOSFET with a channel along 〈100〉 crystallographic axis has been developed. Current drivability of pMOSFET is improved by about 15% by changing a channel direction from 〈110〉 to 〈100〉 due to an increase in hole mobility and high immunity against short channel effect (SCE). As a result, the drive current of 810 for nMOS and of 420 μA/μm for pMOS with 0.14 μm gate length has been achieved under 1 nA/μm off current at 1.8V operation.

Original languageEnglish
Pages (from-to)657-660
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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