Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length

H. Sayama, Y. Nishida, H. Oda, T. Oishi, S. Shimizu, T. Kunikiyo, K. Sonoda, Y. Inoue, Masahide Inuishi

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

A high performance CMOSFET with a channel along 〈100〉 crystallographic axis has been developed. Current drivability of pMOSFET is improved by about 15% by changing a channel direction from 〈110〉 to 〈100〉 due to an increase in hole mobility and high immunity against short channel effect (SCE). As a result, the drive current of 810 for nMOS and of 420 μA/μm for pMOS with 0.14 μm gate length has been achieved under 1 nA/μm off current at 1.8V operation.

Original languageEnglish
Pages (from-to)657-660
Number of pages4
JournalUnknown Journal
Publication statusPublished - 1999
Externally publishedYes

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Hole mobility
immunity
hole mobility

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length. / Sayama, H.; Nishida, Y.; Oda, H.; Oishi, T.; Shimizu, S.; Kunikiyo, T.; Sonoda, K.; Inoue, Y.; Inuishi, Masahide.

In: Unknown Journal, 1999, p. 657-660.

Research output: Contribution to journalArticle

Sayama, H, Nishida, Y, Oda, H, Oishi, T, Shimizu, S, Kunikiyo, T, Sonoda, K, Inoue, Y & Inuishi, M 1999, 'Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length', Unknown Journal, pp. 657-660.
Sayama, H. ; Nishida, Y. ; Oda, H. ; Oishi, T. ; Shimizu, S. ; Kunikiyo, T. ; Sonoda, K. ; Inoue, Y. ; Inuishi, Masahide. / Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length. In: Unknown Journal. 1999 ; pp. 657-660.
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AU - Shimizu, S.

AU - Kunikiyo, T.

AU - Sonoda, K.

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AU - Inuishi, Masahide

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