Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length

H. Sayama, Y. Nishida, H. Oda, T. Oishi, S. Shimizu, T. Kunikiyo, K. Sonoda, Y. Inoue, M. Inuishi

Research output: Contribution to journalConference article

33 Citations (Scopus)

Abstract

A high performance CMOSFET with a channel along 〈100〉 crystallographic axis has been developed. Current drivability of pMOSFET is improved by about 15% by changing a channel direction from 〈110〉 to 〈100〉 due to an increase in hole mobility and high immunity against short channel effect (SCE). As a result, the drive current of 810 for nMOS and of 420 μA/μm for pMOS with 0.14 μm gate length has been achieved under 1 nA/μm off current at 1.8V operation.

Original languageEnglish
Pages (from-to)657-660
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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