Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

Taisuke Kageura, Kanami Kato, Hayate Yamano, Evi Suaebah, Miki Kajiya, Sora Kawai, Masafumi Inaba, Takashi Tanii, Moriyoshi Haruyama, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Tokuyuki Teraji, Junichi Isoya, Shozo Kono, Hiroshi Kawarada

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    Abstract

    A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.

    Original languageEnglish
    Article number055503
    JournalApplied Physics Express
    Volume10
    Issue number5
    DOIs
    Publication statusPublished - 2017 May 1

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    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Kageura, T., Kato, K., Yamano, H., Suaebah, E., Kajiya, M., Kawai, S., Inaba, M., Tanii, T., Haruyama, M., Yamada, K., Onoda, S., Kada, W., Hanaizumi, O., Teraji, T., Isoya, J., Kono, S., & Kawarada, H. (2017). Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond. Applied Physics Express, 10(5), [055503]. https://doi.org/10.7567/APEX.10.055503