Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

Taisuke Kageura, Kanami Kato, Hayate Yamano, Evi Suaebah, Miki Kajiya, Sora Kawai, Masafumi Inaba, Takashi Tanii, Moriyoshi Haruyama, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Tokuyuki Teraji, Junichi Isoya, Shozo Kono, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    10 Citations (Scopus)

    Abstract

    A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.

    Original languageEnglish
    Article number055503
    JournalApplied Physics Express
    Volume10
    Issue number5
    DOIs
    Publication statusPublished - 2017 May 1

    Fingerprint

    Nitridation
    Vacancies
    Diamonds
    diamonds
    Nitrogen
    nitrogen
    Electric charge
    electric charge
    Monolayers
    implantation
    radio frequencies
    Stabilization
    stabilization
    Plasmas
    Electric potential
    electric potential

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond. / Kageura, Taisuke; Kato, Kanami; Yamano, Hayate; Suaebah, Evi; Kajiya, Miki; Kawai, Sora; Inaba, Masafumi; Tanii, Takashi; Haruyama, Moriyoshi; Yamada, Keisuke; Onoda, Shinobu; Kada, Wataru; Hanaizumi, Osamu; Teraji, Tokuyuki; Isoya, Junichi; Kono, Shozo; Kawarada, Hiroshi.

    In: Applied Physics Express, Vol. 10, No. 5, 055503, 01.05.2017.

    Research output: Contribution to journalArticle

    Kageura, T, Kato, K, Yamano, H, Suaebah, E, Kajiya, M, Kawai, S, Inaba, M, Tanii, T, Haruyama, M, Yamada, K, Onoda, S, Kada, W, Hanaizumi, O, Teraji, T, Isoya, J, Kono, S & Kawarada, H 2017, 'Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond', Applied Physics Express, vol. 10, no. 5, 055503. https://doi.org/10.7567/APEX.10.055503
    Kageura, Taisuke ; Kato, Kanami ; Yamano, Hayate ; Suaebah, Evi ; Kajiya, Miki ; Kawai, Sora ; Inaba, Masafumi ; Tanii, Takashi ; Haruyama, Moriyoshi ; Yamada, Keisuke ; Onoda, Shinobu ; Kada, Wataru ; Hanaizumi, Osamu ; Teraji, Tokuyuki ; Isoya, Junichi ; Kono, Shozo ; Kawarada, Hiroshi. / Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond. In: Applied Physics Express. 2017 ; Vol. 10, No. 5.
    @article{e32d88ce6e0541ceb39d7e763aebf465,
    title = "Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond",
    abstract = "A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV{\%}) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV{\%} centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV{\%} centers near the surface compared with the states obtained for alternatively terminated surfaces.",
    author = "Taisuke Kageura and Kanami Kato and Hayate Yamano and Evi Suaebah and Miki Kajiya and Sora Kawai and Masafumi Inaba and Takashi Tanii and Moriyoshi Haruyama and Keisuke Yamada and Shinobu Onoda and Wataru Kada and Osamu Hanaizumi and Tokuyuki Teraji and Junichi Isoya and Shozo Kono and Hiroshi Kawarada",
    year = "2017",
    month = "5",
    day = "1",
    doi = "10.7567/APEX.10.055503",
    language = "English",
    volume = "10",
    journal = "Applied Physics Express",
    issn = "1882-0778",
    publisher = "Japan Society of Applied Physics",
    number = "5",

    }

    TY - JOUR

    T1 - Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

    AU - Kageura, Taisuke

    AU - Kato, Kanami

    AU - Yamano, Hayate

    AU - Suaebah, Evi

    AU - Kajiya, Miki

    AU - Kawai, Sora

    AU - Inaba, Masafumi

    AU - Tanii, Takashi

    AU - Haruyama, Moriyoshi

    AU - Yamada, Keisuke

    AU - Onoda, Shinobu

    AU - Kada, Wataru

    AU - Hanaizumi, Osamu

    AU - Teraji, Tokuyuki

    AU - Isoya, Junichi

    AU - Kono, Shozo

    AU - Kawarada, Hiroshi

    PY - 2017/5/1

    Y1 - 2017/5/1

    N2 - A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.

    AB - A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.

    UR - http://www.scopus.com/inward/record.url?scp=85018961845&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85018961845&partnerID=8YFLogxK

    U2 - 10.7567/APEX.10.055503

    DO - 10.7567/APEX.10.055503

    M3 - Article

    VL - 10

    JO - Applied Physics Express

    JF - Applied Physics Express

    SN - 1882-0778

    IS - 5

    M1 - 055503

    ER -