Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)

Ippei Enokida, Yukio Furukawa

Research output: Contribution to journal › Review article

Abstract

The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.

Original languageEnglish
Pages (from-to)498-501
Number of pages4
JournalChemistry Letters
Volume48
Issue number5
DOIs
Publication statusPublished - 2019 Jan 1

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Ionic Liquids
Thiophenes
Anions
Transistors
Doping (additives)
Gene Conversion
Polarons
Electron transitions
Raman spectroscopy
Electrons

Keywords

  • Bipolaron
  • Ionic liquid
  • Polaron

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16). / Enokida, Ippei; Furukawa, Yukio.

In: Chemistry Letters, Vol. 48, No. 5, 01.01.2019, p. 498-501.

Research output: Contribution to journal › Review article

Enokida, I & Furukawa, Y 2019, 'Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)', Chemistry Letters, vol. 48, no. 5, pp. 498-501. https://doi.org/10.1246/cl.190039
Enokida I, Furukawa Y. Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16). Chemistry Letters. 2019 Jan 1;48(5):498-501. https://doi.org/10.1246/cl.190039
Enokida, Ippei ; Furukawa, Yukio. / Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16). In: Chemistry Letters. 2019 ; Vol. 48, No. 5. pp. 498-501.
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abstract = "The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol {\%}/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.",
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