Abstract
The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.
Original language | English |
---|---|
Pages (from-to) | 498-501 |
Number of pages | 4 |
Journal | Chemistry Letters |
Volume | 48 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2019 Jan 1 |
Fingerprint
Keywords
- Bipolaron
- Ionic liquid
- Polaron
ASJC Scopus subject areas
- Chemistry(all)
Cite this
Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16). / Enokida, Ippei; Furukawa, Yukio.
In: Chemistry Letters, Vol. 48, No. 5, 01.01.2019, p. 498-501.Research output: Contribution to journal › Review article
}
TY - JOUR
T1 - Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)
AU - Enokida, Ippei
AU - Furukawa, Yukio
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.
AB - The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.
KW - Bipolaron
KW - Ionic liquid
KW - Polaron
UR - http://www.scopus.com/inward/record.url?scp=85066150464&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85066150464&partnerID=8YFLogxK
U2 - 10.1246/cl.190039
DO - 10.1246/cl.190039
M3 - Review article
AN - SCOPUS:85066150464
VL - 48
SP - 498
EP - 501
JO - Chemistry Letters
JF - Chemistry Letters
SN - 0366-7022
IS - 5
ER -