Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)

Ippei Enokida; Yukio Furukawa

doi:10.1246/cl.190039

Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)

Ippei Enokida^*, Yukio Furukawa

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Review article › peer-review

Abstract

The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP^- impeded the bipolaron formation even at a high doping level.

Original language	English
Pages (from-to)	498-501
Number of pages	4
Journal	Chemistry Letters
Volume	48
Issue number	5
DOIs	https://doi.org/10.1246/cl.190039
Publication status	Published - 2019

Keywords

Bipolaron
Ionic liquid
Polaron

ASJC Scopus subject areas

Chemistry(all)

Access to Document

10.1246/cl.190039

Cite this

@article{a0cefc390b054f9f95b5729055c1d018,

title = "Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)",

abstract = "The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.",

keywords = "Bipolaron, Ionic liquid, Polaron",

author = "Ippei Enokida and Yukio Furukawa",

note = "Funding Information: This work was financially supported in part by a Waseda University Grant for Special Research Project (Project number: 2016K-206). I. Enokida acknowledges the Leading Graduate Program in Science and Engineering, Waseda University from MEXT, Japan. Publisher Copyright: {\textcopyright} 2019 The Chemical Society of Japan.",

year = "2019",

doi = "10.1246/cl.190039",

language = "English",

volume = "48",

pages = "498--501",

journal = "Chemistry Letters",

issn = "0366-7022",

publisher = "Chemical Society of Japan",

number = "5",

}

TY - JOUR

T1 - Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)

AU - Enokida, Ippei

AU - Furukawa, Yukio

N1 - Funding Information: This work was financially supported in part by a Waseda University Grant for Special Research Project (Project number: 2016K-206). I. Enokida acknowledges the Leading Graduate Program in Science and Engineering, Waseda University from MEXT, Japan. Publisher Copyright: © 2019 The Chemical Society of Japan.

PY - 2019

Y1 - 2019

N2 - The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.

AB - The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.

KW - Bipolaron

KW - Ionic liquid

KW - Polaron

UR - http://www.scopus.com/inward/record.url?scp=85066150464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066150464&partnerID=8YFLogxK

U2 - 10.1246/cl.190039

DO - 10.1246/cl.190039

M3 - Review article

AN - SCOPUS:85066150464

VL - 48

SP - 498

EP - 501

JO - Chemistry Letters

JF - Chemistry Letters

SN - 0366-7022

IS - 5

ER -

Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this