Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)

Ippei Enokida, Yukio Furukawa

Research output: Contribution to journalReview article

Abstract

The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.

Original languageEnglish
Pages (from-to)498-501
Number of pages4
JournalChemistry Letters
Volume48
Issue number5
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Ionic Liquids
Thiophenes
Anions
Transistors
Doping (additives)
Gene Conversion
Polarons
Electron transitions
Raman spectroscopy
Electrons

Keywords

  • Bipolaron
  • Ionic liquid
  • Polaron

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

@article{a0cefc390b054f9f95b5729055c1d018,
title = "Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)",
abstract = "The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol {\%}/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.",
keywords = "Bipolaron, Ionic liquid, Polaron",
author = "Ippei Enokida and Yukio Furukawa",
year = "2019",
month = "1",
day = "1",
doi = "10.1246/cl.190039",
language = "English",
volume = "48",
pages = "498--501",
journal = "Chemistry Letters",
issn = "0366-7022",
publisher = "Chemical Society of Japan",
number = "5",

}

TY - JOUR

T1 - Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)

AU - Enokida, Ippei

AU - Furukawa, Yukio

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.

AB - The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.

KW - Bipolaron

KW - Ionic liquid

KW - Polaron

UR - http://www.scopus.com/inward/record.url?scp=85066150464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066150464&partnerID=8YFLogxK

U2 - 10.1246/cl.190039

DO - 10.1246/cl.190039

M3 - Review article

AN - SCOPUS:85066150464

VL - 48

SP - 498

EP - 501

JO - Chemistry Letters

JF - Chemistry Letters

SN - 0366-7022

IS - 5

ER -