Effect of atomic-hydrogen treatment of (001) GaAs substrate at `high temperatures' on rf plasma-assisted molecular beam epitaxy of cubic GaN

A. Yoshikawa, H. Nagano, Z. X. Qin, Y. Sugure, A. W. Jia, Masakazu Kobayashi, M. Shimotomai, Y. Kato, K. Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Growth of high quality c-GaN on atomic-H treated (001) GaAs was examined by rf plasma-assisted MBE. First the initial growth stages (atomic-H treatment of GaAs, nitridation/deposition of a thin GaN buffer layer, the post deposition annealing of the buffer layer, and epitaxy of c-GaN) were studied by RHEED and AFM observations. It was found that atomically flat GaAs surface with one monolayer-height steps and ragged step edges could be obtained by the atomic-H treatment at high temperatures. It was found that the atomic-H treated GaAs surface was preferable to grow high quality c-GaN; the FWHM of the X-ray rocking curve for the (002) c-GaN was as small as 70-90 arcsec.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
PublisherMRS
Pages227-232
Number of pages6
Volume482
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: 1997 Dec 11997 Dec 4

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period97/12/197/12/4

Fingerprint

Buffer layers
Molecular beam epitaxy
Hydrogen
Plasmas
Reflection high energy electron diffraction
Nitridation
Substrates
Full width at half maximum
Epitaxial growth
Monolayers
Annealing
X rays
Temperature
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Yoshikawa, A., Nagano, H., Qin, Z. X., Sugure, Y., Jia, A. W., Kobayashi, M., ... Takahashi, K. (1997). Effect of atomic-hydrogen treatment of (001) GaAs substrate at `high temperatures' on rf plasma-assisted molecular beam epitaxy of cubic GaN. In S. R. Phillpot, P. D. Bristowe, D. G. Stroud, & J. R. Smith (Eds.), Materials Research Society Symposium - Proceedings (Vol. 482, pp. 227-232). MRS.

Effect of atomic-hydrogen treatment of (001) GaAs substrate at `high temperatures' on rf plasma-assisted molecular beam epitaxy of cubic GaN. / Yoshikawa, A.; Nagano, H.; Qin, Z. X.; Sugure, Y.; Jia, A. W.; Kobayashi, Masakazu; Shimotomai, M.; Kato, Y.; Takahashi, K.

Materials Research Society Symposium - Proceedings. ed. / S.R. Phillpot; P.D. Bristowe; D.G. Stroud; J.R. Smith. Vol. 482 MRS, 1997. p. 227-232.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yoshikawa, A, Nagano, H, Qin, ZX, Sugure, Y, Jia, AW, Kobayashi, M, Shimotomai, M, Kato, Y & Takahashi, K 1997, Effect of atomic-hydrogen treatment of (001) GaAs substrate at `high temperatures' on rf plasma-assisted molecular beam epitaxy of cubic GaN. in SR Phillpot, PD Bristowe, DG Stroud & JR Smith (eds), Materials Research Society Symposium - Proceedings. vol. 482, MRS, pp. 227-232, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 97/12/1.
Yoshikawa A, Nagano H, Qin ZX, Sugure Y, Jia AW, Kobayashi M et al. Effect of atomic-hydrogen treatment of (001) GaAs substrate at `high temperatures' on rf plasma-assisted molecular beam epitaxy of cubic GaN. In Phillpot SR, Bristowe PD, Stroud DG, Smith JR, editors, Materials Research Society Symposium - Proceedings. Vol. 482. MRS. 1997. p. 227-232
Yoshikawa, A. ; Nagano, H. ; Qin, Z. X. ; Sugure, Y. ; Jia, A. W. ; Kobayashi, Masakazu ; Shimotomai, M. ; Kato, Y. ; Takahashi, K. / Effect of atomic-hydrogen treatment of (001) GaAs substrate at `high temperatures' on rf plasma-assisted molecular beam epitaxy of cubic GaN. Materials Research Society Symposium - Proceedings. editor / S.R. Phillpot ; P.D. Bristowe ; D.G. Stroud ; J.R. Smith. Vol. 482 MRS, 1997. pp. 227-232
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abstract = "Growth of high quality c-GaN on atomic-H treated (001) GaAs was examined by rf plasma-assisted MBE. First the initial growth stages (atomic-H treatment of GaAs, nitridation/deposition of a thin GaN buffer layer, the post deposition annealing of the buffer layer, and epitaxy of c-GaN) were studied by RHEED and AFM observations. It was found that atomically flat GaAs surface with one monolayer-height steps and ragged step edges could be obtained by the atomic-H treatment at high temperatures. It was found that the atomic-H treated GaAs surface was preferable to grow high quality c-GaN; the FWHM of the X-ray rocking curve for the (002) c-GaN was as small as 70-90 arcsec.",
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AB - Growth of high quality c-GaN on atomic-H treated (001) GaAs was examined by rf plasma-assisted MBE. First the initial growth stages (atomic-H treatment of GaAs, nitridation/deposition of a thin GaN buffer layer, the post deposition annealing of the buffer layer, and epitaxy of c-GaN) were studied by RHEED and AFM observations. It was found that atomically flat GaAs surface with one monolayer-height steps and ragged step edges could be obtained by the atomic-H treatment at high temperatures. It was found that the atomic-H treated GaAs surface was preferable to grow high quality c-GaN; the FWHM of the X-ray rocking curve for the (002) c-GaN was as small as 70-90 arcsec.

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