Effect of Cl- ionic solutions on electrolyte-solution-gate diamond field-effect transistors

Toshikatsu Sakai, Yuta Araki, Hirofumi Kanazawa, Hitoshi Umezawa, Minoru Tachiki, Hiroshi Kawarada

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Diamond field-effect transistors (FETs) operate in electrolyte solutions having a wide pH range of 1-13. The FETs have been fabricated using a p-type surface conductive layer, where the diamond surface is exposed directly to the electrolyte solutions. From the drain current-gate voltage (I ds-Vgs) characteristics of the FETs, it appears that the threshold voltages of the FETs are independent of the pH value of the solution. In Cl- ionic solutions, however, the threshold voltages shift approximately 30 mV with a one-order-of-magnitude change of molar concentration of Cl- ions. This sensitivity of the FET to Cl- ion's concrentration is observed in the 10-110-6M range of potassium chloride (KC1) solutions

Original languageEnglish
Pages (from-to)2595-2597
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number4 B
DOIs
Publication statusPublished - 2002 Apr 1

Keywords

  • Cl ion
  • Diamond
  • Electrolyte solution
  • Hydrogen termination
  • ISFET
  • Polycrystal

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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