Effect of Cl- ionic solutions on electrolyte-solution-gate diamond field-effect transistors

Toshikatsu Sakai, Yuta Araki, Hirofumi Kanazawa, Hitoshi Umezawa, Minoru Tachiki, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    16 Citations (Scopus)


    Diamond field-effect transistors (FETs) operate in electrolyte solutions having a wide pH range of 1-13. The FETs have been fabricated using a p-type surface conductive layer, where the diamond surface is exposed directly to the electrolyte solutions. From the drain current-gate voltage (I ds-Vgs) characteristics of the FETs, it appears that the threshold voltages of the FETs are independent of the pH value of the solution. In Cl- ionic solutions, however, the threshold voltages shift approximately 30 mV with a one-order-of-magnitude change of molar concentration of Cl- ions. This sensitivity of the FET to Cl- ion's concrentration is observed in the 10-110-6M range of potassium chloride (KC1) solutions

    Original languageEnglish
    Pages (from-to)2595-2597
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Issue number4 B
    Publication statusPublished - 2002 Apr



    • Cl ion
    • Diamond
    • Electrolyte solution
    • Hydrogen termination
    • ISFET
    • Polycrystal

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this