Effect of deuterium anneal on sio2/si(L00) interface traps and electron spin resonance signals of ultrathin si02 films

Hisashi Fukuda, Tomo Ueno, Hiroshi Kawarada, Iwao Ohdomari

Research output: Contribution to journalArticle

6 Citations (Scopus)


Anneal kinetics of the SiO2/Si(l00) interface defects of 5-nm-thick Si02 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pbo and Pbi) at the Si(2/Si(l00) interface: These Pbo and Pbi defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (10 s). We conclude that there are annihilation and dissociation processes causing the Pbo and Pbi defects, dependent on the D2 anneal time and temperature.

Original languageEnglish
Pages (from-to)569-571
Number of pages3
JournalJapanese journal of applied physics
Issue number4 B
Publication statusPublished - 1993 Apr



  • Electron spin resonance
  • Si02/Si interface
  • Silicon
  • Thin insulator film

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this