Effect of deuterium anneal on SiO2/Si(100) interface traps and electron spin resonance signals of ultrathin SiO2 films

Hisashi Fukuda, Tomo Ueno, Hiroshi Kawarada, Iwao Ohdomari

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Anneal kinetics of the SiO2/Si(100) interface defects of 5-nm-thick SiO2 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pb0 and Pb1) at the SiO2/Si(100) interface: These Pb0 and Pb1 defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (<10 s). We conclude that there are annihilation and dissociation processes causing the Pb0 and Pb1 defects, dependent on the D2 anneal time and temperature.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume32
    Issue number4 B
    Publication statusPublished - 1993

    Fingerprint

    Ultrathin films
    Deuterium
    Paramagnetic resonance
    deuterium
    electron paramagnetic resonance
    traps
    Defects
    defects
    Thick films
    thick films
    dissociation
    Temperature
    Kinetics
    causes
    kinetics
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Effect of deuterium anneal on SiO2/Si(100) interface traps and electron spin resonance signals of ultrathin SiO2 films. / Fukuda, Hisashi; Ueno, Tomo; Kawarada, Hiroshi; Ohdomari, Iwao.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 32, No. 4 B, 1993.

    Research output: Contribution to journalArticle

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    AU - Fukuda, Hisashi

    AU - Ueno, Tomo

    AU - Kawarada, Hiroshi

    AU - Ohdomari, Iwao

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    AB - Anneal kinetics of the SiO2/Si(100) interface defects of 5-nm-thick SiO2 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pb0 and Pb1) at the SiO2/Si(100) interface: These Pb0 and Pb1 defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (<10 s). We conclude that there are annihilation and dissociation processes causing the Pb0 and Pb1 defects, dependent on the D2 anneal time and temperature.

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