Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy

A. Kawaharazuka, K. Onomitsu, J. Nishinaga, Y. Horikoshi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We investigate the effect of excitons on the photo-absorption in the solar-cell with AlGaAs/GaAs superlattice active layer. Absorption spectrum measured at room temperature is analyzed by using numerical simulation. Experimentally obtained spectrum is well explained by the simulation taking the excitonic effect into account. The photo-absorption is enhanced by excitons especially near the absorption edge due to the discrete bound exciton states as well as unbound continuous sates. This result clearly indicates that the excitonic absorption is effective in the superlattice even at room temperature. Superlattice active layer enhances the absorption efficiency of solar-cells and very useful for device applications.

Original languageEnglish
Pages (from-to)504-507
Number of pages4
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
Publication statusPublished - 2011 May 15

Fingerprint

Molecular beam epitaxy
Excitons
aluminum gallium arsenides
Solar cells
molecular beam epitaxy
solar cells
excitons
photoabsorption
room temperature
Absorption spectra
simulation
absorption spectra
Temperature
Computer simulation
gallium arsenide
LDS 751

Keywords

  • Molecular beam epitaxy
  • Semiconducting gallium arsenide
  • Solar cells
  • Superlattices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy. / Kawaharazuka, A.; Onomitsu, K.; Nishinaga, J.; Horikoshi, Y.

In: Journal of Crystal Growth, Vol. 323, No. 1, 15.05.2011, p. 504-507.

Research output: Contribution to journalArticle

Kawaharazuka, A. ; Onomitsu, K. ; Nishinaga, J. ; Horikoshi, Y. / Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy. In: Journal of Crystal Growth. 2011 ; Vol. 323, No. 1. pp. 504-507.
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AU - Nishinaga, J.

AU - Horikoshi, Y.

PY - 2011/5/15

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AB - We investigate the effect of excitons on the photo-absorption in the solar-cell with AlGaAs/GaAs superlattice active layer. Absorption spectrum measured at room temperature is analyzed by using numerical simulation. Experimentally obtained spectrum is well explained by the simulation taking the excitonic effect into account. The photo-absorption is enhanced by excitons especially near the absorption edge due to the discrete bound exciton states as well as unbound continuous sates. This result clearly indicates that the excitonic absorption is effective in the superlattice even at room temperature. Superlattice active layer enhances the absorption efficiency of solar-cells and very useful for device applications.

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KW - Semiconducting gallium arsenide

KW - Solar cells

KW - Superlattices

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