Effect of fluorine-doping on the dielectric strength of thin SiO 2 films formed by plasma-enhanced chemical vapor deposition

K. Ishii, A. Takami, Yoshimichi Ohki

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Fluorine-doped thin SiO 2 films were formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF 4, and the intrinsic dielectric strength was measured with a self-healing breakdown technique by applying short-duration voltage pulses. The vacuum-ultraviolet absorption and photoluminescence were observed using synchrotron radiation as a photon source. From the decay profile of luminescence, the microscopic structure of the film was estimated. In the case of the film containing a higher amount of fluorine, the randomness in microscopic structure is smaller and the dielectric strength is higher. From this, it is considered that the higher dielectric strength comes from the relaxation of the structural distortion in the film.

    Original languageEnglish
    Title of host publicationConference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report
    Editors Anon
    PublisherIEEE
    Pages675-678
    Number of pages4
    Volume2
    Publication statusPublished - 1996
    EventProceedings of the 1996 Annual Conference on Electrical Insulation and Dielectric Phenomena. Part 2 (of 2) - Millbrae, CA, USA
    Duration: 1996 Oct 201996 Oct 23

    Other

    OtherProceedings of the 1996 Annual Conference on Electrical Insulation and Dielectric Phenomena. Part 2 (of 2)
    CityMillbrae, CA, USA
    Period96/10/2096/10/23

    Fingerprint

    Plasma enhanced chemical vapor deposition
    Fluorine
    Doping (additives)
    Synchrotron radiation
    Light sources
    Luminescence
    Photoluminescence
    Photons
    Vacuum
    Electric potential
    Polymers

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Industrial and Manufacturing Engineering
    • Building and Construction

    Cite this

    Ishii, K., Takami, A., & Ohki, Y. (1996). Effect of fluorine-doping on the dielectric strength of thin SiO 2 films formed by plasma-enhanced chemical vapor deposition In Anon (Ed.), Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report (Vol. 2, pp. 675-678). IEEE.

    Effect of fluorine-doping on the dielectric strength of thin SiO 2 films formed by plasma-enhanced chemical vapor deposition . / Ishii, K.; Takami, A.; Ohki, Yoshimichi.

    Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report. ed. / Anon. Vol. 2 IEEE, 1996. p. 675-678.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Ishii, K, Takami, A & Ohki, Y 1996, Effect of fluorine-doping on the dielectric strength of thin SiO 2 films formed by plasma-enhanced chemical vapor deposition in Anon (ed.), Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report. vol. 2, IEEE, pp. 675-678, Proceedings of the 1996 Annual Conference on Electrical Insulation and Dielectric Phenomena. Part 2 (of 2), Millbrae, CA, USA, 96/10/20.
    Ishii K, Takami A, Ohki Y. Effect of fluorine-doping on the dielectric strength of thin SiO 2 films formed by plasma-enhanced chemical vapor deposition In Anon, editor, Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report. Vol. 2. IEEE. 1996. p. 675-678
    Ishii, K. ; Takami, A. ; Ohki, Yoshimichi. / Effect of fluorine-doping on the dielectric strength of thin SiO 2 films formed by plasma-enhanced chemical vapor deposition Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report. editor / Anon. Vol. 2 IEEE, 1996. pp. 675-678
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