Abstract
Fluorine-doped thin SiO2 films were formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the intrinsic dielectric strength was measured with a self-healing breakdown technique by applying short-duration voltage pulses. The vacuum-ultraviolet absorption and photoluminescence were observed using synchrotron radiation as a photon source. From the decay profile of luminescence, the microscopic structure of the film was estimated. In the case of the film containing a higher amount of fluorine, the randomness in microscopic structure is smaller and the dielectric strength is higher. From this, it is considered that the higher dielectric strength comes from the relaxation of the structural distortion in the film.
| Original language | English |
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| Pages (from-to) | 675-678 |
| Number of pages | 4 |
| Journal | Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report |
| Volume | 2 |
| Publication status | Published - 1996 Dec 1 |
| Event | Proceedings of the 1996 Annual Conference on Electrical Insulation and Dielectric Phenomena. Part 2 (of 2) - Millbrae, CA, USA Duration: 1996 Oct 20 → 1996 Oct 23 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering
- Building and Construction