Effect of HF treatment on photoluminescence characteristics of a-Si

H nanoball films

Yosuke Motoyama, Fumiaki Suzuki, Isamu Kato

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We perform HF treatment to a-Si:H nanoball films fabricated by the double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system. By HF treatment, Photoluminescence wavelength shifted from 760 nm to 590 nm. We have determined the diameter of Si nanocrystals by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the diameter of Si nanocrystals decreases from 5 nm to 3.7 nm, by HF treatment.

Original languageEnglish
Pages (from-to)7542-7543
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number11 A
DOIs
Publication statusPublished - 2004 Nov

Fingerprint

Nanocrystals
Photoluminescence
photoluminescence
nanocrystals
Chemical vapor deposition
Microwaves
Transmission electron microscopy
Plasmas
X ray diffraction
Wavelength
vapor deposition
microwaves
transmission electron microscopy
diffraction
wavelengths
x rays

Keywords

  • A-Si:H nanoball
  • Chemical vapor deposition
  • HF treatment
  • High-resolution transmission electron microscopy
  • Microwave plasma
  • Photoluminescence
  • Si nanocrystal

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of HF treatment on photoluminescence characteristics of a-Si : H nanoball films. / Motoyama, Yosuke; Suzuki, Fumiaki; Kato, Isamu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 11 A, 11.2004, p. 7542-7543.

Research output: Contribution to journalArticle

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