Effect of HF treatment on photoluminescence characteristics of a-Si: H nanoball films

Yosuke Motoyama; Fumiaki Suzuki; Isamu Kato

doi:10.1143/JJAP.43.7542

Effect of HF treatment on photoluminescence characteristics of a-Si: H nanoball films

Yosuke Motoyama^*, Fumiaki Suzuki, Isamu Kato

^*Corresponding author for this work

Waseda University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We perform HF treatment to a-Si:H nanoball films fabricated by the double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system. By HF treatment, Photoluminescence wavelength shifted from 760 nm to 590 nm. We have determined the diameter of Si nanocrystals by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the diameter of Si nanocrystals decreases from 5 nm to 3.7 nm, by HF treatment.

Original language	English
Pages (from-to)	7542-7543
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	11 A
DOIs	https://doi.org/10.1143/JJAP.43.7542
Publication status	Published - 2004 Nov

Keywords

A-Si:H nanoball
Chemical vapor deposition
HF treatment
High-resolution transmission electron microscopy
Microwave plasma
Photoluminescence
Si nanocrystal

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1143/JJAP.43.7542

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title = "Effect of HF treatment on photoluminescence characteristics of a-Si: H nanoball films",

abstract = "We perform HF treatment to a-Si:H nanoball films fabricated by the double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system. By HF treatment, Photoluminescence wavelength shifted from 760 nm to 590 nm. We have determined the diameter of Si nanocrystals by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the diameter of Si nanocrystals decreases from 5 nm to 3.7 nm, by HF treatment.",

keywords = "A-Si:H nanoball, Chemical vapor deposition, HF treatment, High-resolution transmission electron microscopy, Microwave plasma, Photoluminescence, Si nanocrystal",

author = "Yosuke Motoyama and Fumiaki Suzuki and Isamu Kato",

year = "2004",

month = nov,

doi = "10.1143/JJAP.43.7542",

language = "English",

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T1 - Effect of HF treatment on photoluminescence characteristics of a-Si

T2 - H nanoball films

AU - Motoyama, Yosuke

AU - Suzuki, Fumiaki

AU - Kato, Isamu

PY - 2004/11

Y1 - 2004/11

N2 - We perform HF treatment to a-Si:H nanoball films fabricated by the double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system. By HF treatment, Photoluminescence wavelength shifted from 760 nm to 590 nm. We have determined the diameter of Si nanocrystals by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the diameter of Si nanocrystals decreases from 5 nm to 3.7 nm, by HF treatment.

AB - We perform HF treatment to a-Si:H nanoball films fabricated by the double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system. By HF treatment, Photoluminescence wavelength shifted from 760 nm to 590 nm. We have determined the diameter of Si nanocrystals by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the diameter of Si nanocrystals decreases from 5 nm to 3.7 nm, by HF treatment.

KW - A-Si:H nanoball

KW - Chemical vapor deposition

KW - HF treatment

KW - High-resolution transmission electron microscopy

KW - Microwave plasma

KW - Photoluminescence

KW - Si nanocrystal

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Effect of HF treatment on photoluminescence characteristics of a-Si: H nanoball films

Abstract

Keywords

ASJC Scopus subject areas

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