Effect of highly concentrated ozone on the etching properties of preoxide films on Si(100)

Ken Nakamura, Shingo Ichimura, Akira Kurokawa, Kunihiko Koike

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have investigated the effect of ozone on already existing silicon oxide films as preoxide on Si(100). The use of highly concentrated ozone (25 vol%) at atmospheric pressure has made it possible to modify a native oxide film on Si(100) at 350°C, resulting in upgraded film quality and reduced thickness of structural transition layers. This was shown by the change of an etching rate by hydrofluoric acid (HF) solution of the oxide film exposed to ozone. However, the exposure of ozone to Si(100) at 350°C with an already existing thermally grown oxide film caused no change in the distribution of transition layers in the oxide. This contrast suggests the possibility of upgrading the properties of a preoxide film without structural transition layers at the appropriate substrate temperature.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number7 A
Publication statusPublished - 2002 Jul 1
Externally publishedYes

Fingerprint

Ozone
ozone
Oxide films
transition layers
oxide films
Etching
etching
Hydrofluoric acid
upgrading
Silicon oxides
hydrofluoric acid
silicon oxides
Atmospheric pressure
atmospheric pressure
Oxides
oxides
Substrates
Temperature
temperature

Keywords

  • Etching
  • Interface
  • Oxidation
  • Ozone
  • Silicon
  • Silicon oxide
  • Thin film
  • XPS

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of highly concentrated ozone on the etching properties of preoxide films on Si(100). / Nakamura, Ken; Ichimura, Shingo; Kurokawa, Akira; Koike, Kunihiko.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 7 A, 01.07.2002.

Research output: Contribution to journalArticle

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