Effect of hydrogen and cluster morphology on the electronic behavior of Ni-Nb-Zr-H glassy alloys with subnanometer-sized icosahedral Zr 5Ni5Nb5 clusters

Mikio Fukuhara, Hajime Yoshida, Hiroshi Kawarada

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    2 Citations (Scopus)

    Abstract

    The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni0.36Nb0.24Zr0.40) 100-xHx (0 < × < 20) glassy alloys containing distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied. When the hydrogen content is less than 7 at%, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr5Ni5Nb3 clusters. The Id-V g-B characteristics of the (Ni0.36Nb0.4Zr 0.40)90H10 glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.

    Original languageEnglish
    Article number40
    JournalEuropean Physical Journal D
    Volume67
    Issue number2
    DOIs
    Publication statusPublished - 2013 Feb

    Fingerprint

    hydrogen
    electronics
    hydrogen atoms
    field effect transistors
    quantum dots
    continuums
    interference
    oscillations
    room temperature
    configurations
    atoms
    electrons

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

    Cite this

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    abstract = "The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni0.36Nb0.24Zr0.40) 100-xHx (0 < × < 20) glassy alloys containing distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied. When the hydrogen content is less than 7 at{\%}, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr5Ni5Nb3 clusters. The Id-V g-B characteristics of the (Ni0.36Nb0.4Zr 0.40)90H10 glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.",
    author = "Mikio Fukuhara and Hajime Yoshida and Hiroshi Kawarada",
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    T1 - Effect of hydrogen and cluster morphology on the electronic behavior of Ni-Nb-Zr-H glassy alloys with subnanometer-sized icosahedral Zr 5Ni5Nb5 clusters

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    AU - Yoshida, Hajime

    AU - Kawarada, Hiroshi

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    N2 - The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni0.36Nb0.24Zr0.40) 100-xHx (0 < × < 20) glassy alloys containing distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied. When the hydrogen content is less than 7 at%, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr5Ni5Nb3 clusters. The Id-V g-B characteristics of the (Ni0.36Nb0.4Zr 0.40)90H10 glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.

    AB - The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni0.36Nb0.24Zr0.40) 100-xHx (0 < × < 20) glassy alloys containing distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied. When the hydrogen content is less than 7 at%, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr5Ni5Nb3 clusters. The Id-V g-B characteristics of the (Ni0.36Nb0.4Zr 0.40)90H10 glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.

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