Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films

Kwang Soo Seol, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama, Yoshimasa Hama

    Research output: Contribution to journalArticle

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    Abstract

    Decay kinetics of photoluminescence (PL) existing around 2.7 eV has been studied in various ion-implanted thermal SiO2 films as a function of implantation conditions. The PL observed in many samples shows decay constants shorter than 10 ms, which is a well-observed decay constant for silica glass. The change in the decay constant and that in the PL intensity have been found to be systematically related with the mass and the dose of the implanted ions. Therefore, despite the short decay constant, the present 2.7 eV PL is attributable to a triplet-to-singlet transition of oxygen deficient centers, as in the case of silica glass. The rapid decay is interpreted as the increase in spin-orbit coupling interaction due to structural deformations by ion implantation such as the formation of paramagnetic defects and/or densification.

    Original languageEnglish
    Pages (from-to)6444-6447
    Number of pages4
    JournalJournal of Applied Physics
    Volume80
    Issue number11
    Publication statusPublished - 1996 Dec 1

    Fingerprint

    photoluminescence
    kinetics
    decay
    ions
    silica glass
    densification
    ion implantation
    implantation
    orbits
    dosage
    defects
    oxygen
    interactions

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films. / Seol, Kwang Soo; Ohki, Yoshimichi; Nishikawa, Hiroyuki; Takiyama, Makoto; Hama, Yoshimasa.

    In: Journal of Applied Physics, Vol. 80, No. 11, 01.12.1996, p. 6444-6447.

    Research output: Contribution to journalArticle

    Seol, Kwang Soo ; Ohki, Yoshimichi ; Nishikawa, Hiroyuki ; Takiyama, Makoto ; Hama, Yoshimasa. / Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films. In: Journal of Applied Physics. 1996 ; Vol. 80, No. 11. pp. 6444-6447.
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    abstract = "Decay kinetics of photoluminescence (PL) existing around 2.7 eV has been studied in various ion-implanted thermal SiO2 films as a function of implantation conditions. The PL observed in many samples shows decay constants shorter than 10 ms, which is a well-observed decay constant for silica glass. The change in the decay constant and that in the PL intensity have been found to be systematically related with the mass and the dose of the implanted ions. Therefore, despite the short decay constant, the present 2.7 eV PL is attributable to a triplet-to-singlet transition of oxygen deficient centers, as in the case of silica glass. The rapid decay is interpreted as the increase in spin-orbit coupling interaction due to structural deformations by ion implantation such as the formation of paramagnetic defects and/or densification.",
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    AU - Seol, Kwang Soo

    AU - Ohki, Yoshimichi

    AU - Nishikawa, Hiroyuki

    AU - Takiyama, Makoto

    AU - Hama, Yoshimasa

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