Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates

Minghui Hu, Suguru Noda, Yoshiko Tsuji, Tatsuya Okubo, Yukio Yamaguchi, Hiroshi Komiyama

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Abstract

The effect of interfacial interactions on the initial growth of Cu on clean SiO2 and MPTMS-modified SiO2 substrates by sputter deposition was studied using TEM, EDS, and XPS. The number density increased while the interparticle distance decreased, indicating that Cu has a lower mobility on MPTMS islands on MPTMS-modified SiO2 substrates than on clean SiO2 substrates. This difference was attributed to the enhanced interfacial interactions between Cu and S on MPTMS islands on MPTMS-modified SiO2 substrates via the formation of Cu-S bonds, compared with the relatively weak interfacial interactions between Cu and Si or O on clean SiO2 substrates.

Original languageEnglish
Pages (from-to)589-596
Number of pages8
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number3
DOIs
Publication statusPublished - 2002 May
Externally publishedYes

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ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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