Effect of intervalence-band interaction on relaxation time and transport coefficients for holes in non-polar semiconductors

Kyozaburo Takeda, K. Sakui, A. Taguchi, M. Sakata

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Considering the effects of three subbands (heavy, light and split-off hole) and the interaction between them, the authors investigated the relaxation time and the transport coefficients for holes which occupy the warped and non-parabolic valence band of non-polar semiconductors (silicon, germanium and diamond). They considered several scattering mechanisms due to lattice scattering including the non-polar optical phonon scattering and impurity scattering due to ionised and neutral centres. The calculated transport coefficients show good agreement with the experimental values if the above two effects are considered.

Original languageEnglish
Article number018
Pages (from-to)729-745
Number of pages17
JournalJournal of Physics C: Solid State Physics
Volume16
Issue number4
DOIs
Publication statusPublished - 1983
Externally publishedYes

Fingerprint

Relaxation time
transport properties
relaxation time
Scattering
Semiconductor materials
coefficients
scattering
Germanium
Diamond
Phonon scattering
interactions
Silicon
Valence bands
Diamonds
Impurities
germanium
diamonds
valence
impurities
silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Effect of intervalence-band interaction on relaxation time and transport coefficients for holes in non-polar semiconductors. / Takeda, Kyozaburo; Sakui, K.; Taguchi, A.; Sakata, M.

In: Journal of Physics C: Solid State Physics, Vol. 16, No. 4, 018, 1983, p. 729-745.

Research output: Contribution to journalArticle

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AU - Taguchi, A.

AU - Sakata, M.

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AB - Considering the effects of three subbands (heavy, light and split-off hole) and the interaction between them, the authors investigated the relaxation time and the transport coefficients for holes which occupy the warped and non-parabolic valence band of non-polar semiconductors (silicon, germanium and diamond). They considered several scattering mechanisms due to lattice scattering including the non-polar optical phonon scattering and impurity scattering due to ionised and neutral centres. The calculated transport coefficients show good agreement with the experimental values if the above two effects are considered.

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