Effect of intervalence-band interaction on relaxation time and transport coefficients for holes in non-polar semiconductors

K. Takeda, K. Sakui, A. Taguchi, M. Sakata

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Considering the effects of three subbands (heavy, light and split-off hole) and the interaction between them, the authors investigated the relaxation time and the transport coefficients for holes which occupy the warped and non-parabolic valence band of non-polar semiconductors (silicon, germanium and diamond). They considered several scattering mechanisms due to lattice scattering including the non-polar optical phonon scattering and impurity scattering due to ionised and neutral centres. The calculated transport coefficients show good agreement with the experimental values if the above two effects are considered.

Original languageEnglish
Article number018
Pages (from-to)729-745
Number of pages17
JournalJournal of Physics C: Solid State Physics
Issue number4
Publication statusPublished - 1983 Dec 1


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Engineering(all)
  • Physics and Astronomy(all)

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