Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface

Hirofumi Kanazawa, Kwang Soup Song, Toshikatsu Sakai, Yusuke Nakamura, Hitoshi Umezawa, Minoru Tachiki, Hiroshi Kawarada

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The effect of I- ions on the threshold voltages of the electrolyte-solution-gate diamond field-effect transistors (SGFETs) in KI solution is investigated. The threshold voltages of hydrogen-terminated (H-terminated) diamond SGFETs shift in the KI concentration range of 10-6-10-1 M in aqueous solutions. The sensitivity of the H-terminated diamond surface to I- ions is higher than that to Cl- or Br- ions. However, the sensitivity to I- ions of the partially oxygen-terminated (O-terminated) diamond surface drastically decreases with ozone treatment. The mechanisms of these phenomena can be explained by the surface charge and the adsorbability of I- ions on the H-terminated and O-terminated diamond surfaces.

Original languageEnglish
Pages (from-to)618-622
Number of pages5
JournalDiamond and Related Materials
Volume12
Issue number3-7
DOIs
Publication statusPublished - 2003 Mar 1

Keywords

  • Hydrogen-terminated diamond
  • Iodide ions
  • Ion sensitive FET
  • Oxygen-terminated diamond

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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